S2N7002K

S2N7002K Elektronische Bauelemente 115mA, 60V N-Channel Enhancement Mode Power MOSFET SOT-23 A L 3 3 RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free FEATURES Low on resistance. Fast switching speed. Low-voltage drive. Easily designed drive circuits. Easy to parallel. Pb-Free package is available. ESD protected:2000V 3 DRAIN 1 Top View 2 CB 1 2 K E D 1 GATE * F G Millimeter Min. Max. 2.70 3.04 2.10 2.80 1.20 1.60 0.89 1.40 1.78 2.04 0.30 0.50 H J * Gate Pretection Diode SOURCE 2 REF. A B C D E F REF. G H J K L DEVICE MARKING: RK MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER Drain – Source Voltage Gate – Source Voltage Drain Current Drain Reverse Current Total Power Dissipation Note: 1. Pulse width ≦10µS, Duty cycle≦1%. Channel & Storage Temperature Continuous Pulsed Continuous Pulsed Millimeter Min. Max. 0.18 0.40 0.60 0.08 0.20 0.6 REF. 0.85 1.15 SYMBOL VDSS VGSS ID IDP1 IDR IDRP1 PD2 TCH, TSTG RATING 60 ±20 115 0.8 115 0.8 225 150, -55~150 UNIT V V mA A mA A mW ° C 2. When mounted on 1x0.75x0.062 inch glass epoxy board. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER Gate-Source Leakage Current Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Drain-Source On-State Resistance* Forward Transfer Admittance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time * Pulse width ≦300µS, Duty cycle≦1% Turn-off Delay Time SYMBOL IGSS V(BR)DSS IDSS VGS(TH) RDS(ON) * |YFS|* CISS COSS CRSS Td(ON) * Td(OFF) * MIN 60 1 80 - TYP 1.85 25 10 3.0 12 20 MAX ±10 1 2.5 7.5 7.5 50 25 5.0 20 30 UNIT µA V µA V TEST CONDITION VGS=0V, ID =10µA VGS=±20V, VDS=0V VDS= VGS, ID =250µA VGS=10V, ID=0.5A VGS=5V, ID=0.05A VDS=60V, VGS=0V mS pF VDS=10V, ID=0.2A VDS=25V VGS=0V f=1MHz VDD≒30V, V Gs=10V I D=200mA, RL=150 , RGS=10 nS SWITCHING CHARACTERISTICS MEASUREMENT CIRCUIT 08-Mar-2010 Rev. B Page 1 of 3 S2N7002K Elektronische Bauelemente 115mA, 60V N-Channel Enhancement Mode Power MOSFET CHARACTERISTIC CURVES 08-Mar-2010 Rev. B Page 2 of 3 S2N7002K Elektronische Bauelemente 115mA, 60V N-Channel Enhancement Mode Power MOSFET CHARACTERISTIC CURVES 08-Mar-2010 Rev. B Page 3 of 3