S2N7002KT

S2N7002KT Elektronische Bauelemente N-Channel Enhancement MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-523 FEATURES   Low Gate Charge for Fast Switching. ESD Protected Gate. APPLICATIONS   Power Management Load Switch Portable Applications such as Cell Phones, Media Players, Digital Cameras, PDA’s, Video Games, Hand Held Computers, etc. PACKAGE INFORMATION REF. A B C D G J Millimeter Min. Max. 1.50 1.70 0.75 0.95 0.60 0.80 0.23 0.33 0.50BSC 0.10 0.20 REF. K M N S Millimeter Min. Max. 0.30 0.50 o --10 o --10 1.50 1.70 MAXIMUM RATINGS (TA=25℃ unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current tp≦10μs SYMBOL VDSS VGSS ID IDM ISD PD1 TJ TSTG RATING 30 ±10 154 618 154 300 150 -55~150 UNIT V V mA mA mA mW °C °C Continuous Source Current (Body Diode) Total Power Dissipation Operating Junction Temperature Range Operating Storage Temperature Range Note 1. Surface—mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). DEVICE MARKING S2N7002KT = T6 09-Apr-2010 Rev. A Page 1 of 4 S2N7002KT Elektronische Bauelemente N-Channel Enhancement MOSFET ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Gate Threshold Voltage Static Drain-Source On Resistance Forward transfer admittance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance ＊ SYMBOL V(BR)DSS IDSS IGSS VGS(th) RDS(ON) gfs Ciss Coss Crss Td(ON)＊ Tr Td(OFF) Tf VSD ＊ MIN 30 0.5 - TYP 1.0 1.4 2.3 80 11.5 10 3.5 13 15 98 60 0.77 MAX 1.0 ±25 1.5 7.0 7.5 0.9 UNIT V μA μA V Ω mS TEST CONDITIONS VGS = 0V, ID = 100μA VDS = 30V, VGS = 0V VGS= ±10V, VDS=0V VDS=VGS, ID=100μA VGS=4.5V, ID =154mA VGS=2.5V, ID =154mA VDS=3V, ID =154mA Off Characteristics (Note2) On Characteristics(Note2) Dynamic Characteristics pF VDS=5V, VGS=0V, f=1MHz Switching Characteristics nS VDS=5.0V, VGS=4.5V, ID=75mA, RG=10Ω Source-Drain Diode Characteristics V VGS=0V, IS=0.154mA Pulse Test：pulse width ≦ 300μs, Duty cycle ≦ 2％ 09-Apr-2010 Rev. A Page 2 of 4 S2N7002KT Elektronische Bauelemente N-Channel Enhancement MOSFET CHARACTERISTIC CURVE 09-Apr-2010 Rev. A Page 3 of 4 S2N7002KT Elektronische Bauelemente N-Channel Enhancement MOSFET CHARACTERISTIC CURVE 09-Apr-2010 Rev. A Page 4 of 4