S2N7002W

Elektronische Bauelemente 115 mA, 60 V, RDS(ON) = 7.5 Ω N-Ch Small Signal MOSFET S2N7002W RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES ♦ ♦ ♦ Low on-resistance Low gate threshold voltage Low input capacitance Fast switching speed Low input/output leakage Ultra-small surface mount package A L 3 SOT-323 ♦ ♦ ♦ 3 Top View 1 2 CB 1 2 K E D PACKAGE INFORMATION Drain 3 F G H J Drain 3 X Drain 3 1 Gate 6C 72 1 2 Gate Source X 1 2 Gate Source 2 Source REF. A B C D E F Millimeter Min. Max. 1.80 2.20 2.00 2.40 1.15 1.35 0.80 1.00 1.20 1.40 0.30 0.40 REF. G H J K L Millimeter Min. Max. 0.00 0.10 0.425 REF. 0.10 0.25 0.650 TYP. X=Date Code ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Drain-Gate Voltage(RGS=1.0M ) Continuous Drain Current (TA=25° C) Continuous Drain Current (TA=100° C) Pulsed Drain Current 2 1 1 SYMBOL VDDS VDGR ID IDM VGS VGSM RATINGS 60 60 ±115 ±75 ±800 ±20 ±40 225 UNIT Vdc Vdc mAdc Continuous Gate-Source Voltage Non-repetitive Gate-Source Voltage(tP≦50µs) Total Device Dissipation FR-5 Board (TA=25° C) Derating above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 3 Vdc Vpk mW mW/° C ° C/W ° C THERMAL CHARACTERISTICS PD RθJA TJ, TSTG 1.8 556 -55~150 Notes: 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Test: Pulse Width ≦300µs, Duty Cycle ≦2.0% 3. FR-5=1.0*0.75*0.62 in. 18-Dec-2009 Rev. B Page 1 of 3 Elektronische Bauelemente 115 mA, 60 V, RDS(ON) = 7.5 Ω N-Ch Small Signal MOSFET S2N7002W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL MIN. TYP. M AX. UNIT TEST CONDITIONS VGS = 0, ID = 10µAdc OFF CHARACTERISTICS Drain-Source Breakdown Voltage C Zero Gate Voltage Drain TJ =25° Current TJ =125° C Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse V(BR)DSS IDSS IGSSF IGSSR 60 1.0 500 100 -100 1 Vdc µAdc VGS=0, VDS = 60Vdc nAdc VGS=20Vdc nAdc VGS=-20Vdc VDS = VGS, ID =250µAdc VDS≧2.0VDS(ON),VGS=10Vdc VGS=10Vdc, ID =500mAdc VGS=5Vdc, ID =50mAdc VGS=10Vdc, ID =500mAdc VGS=5Vdc, ID =50mAdc VGS=10Vdc, ID =500mAdc VGS=5Vdc, ID =50mAdc mmhos VDS≧2VDS(ON),ID =200mAdc ON CHARACTERISTICS Gate Threshold Voltage On-State Drain Current Static Drain-Source On-State Voltage Static Drain-Source On-State C) Resistance (TA=25° Static Drain-Source On-State C) Resistance (TA=125° Forward Transconductance VGS(th) ID(ON) VDS(ON) 1.0 500 80 1.6 1.4 1.8 - 2.5 3.75 Vdc mA Vdc 0.375 7.5 7.5 13.5 13.5 - rDS(ON) rDS(ON) gFS DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-Off Delay Time Ciss Coss Crss td(ON) td(OFF) 17 10 2.5 7 11 50 25 5.0 1 pF pF pF VDS=25Vdc, VGS=0, f=1MHz VDS=25Vdc, VGS=0, f=1MHz VDS=25Vdc, VGS=0, f=1MHz VDD=25Vdc, ,ID≅500mAdc RG=25 ,RL=50 , VGEN=10V SWITCHING CHARACTERISTICS 20 nS 40 BODY-DRAIN DIODE RATINGS Diode Forward On-Voltage Source Current Continuous Source Current Pulsed VSD IS ISM -1.5 -115 -800 Vdc mAdc mAdc IS=11.5mAdc,VGS=10V Notes: 1. Pulse Test: Pulse Width ≦300µs, Duty Cycle ≦2.0% 18-Dec-2009 Rev. B Page 2 of 3 Elektronische Bauelemente 115 mA, 60 V, RDS(ON) = 7.5 Ω N-Ch Small Signal MOSFET S2N7002W CHARACTERISTIC CURVE (N-Ch, cont’d) 18-Dec-2009 Rev. B Page 3 of 3