SBAS16

SBAS16 High-Speed Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free Switching Diode Description * The SBAS16 is designed for high-speed switching application in hybrid thick and thin-film circuits. * The devices is manufactured by the silicon epitaxial planar process and packed in a plastic surface mount package. S 2 A L 3 Top View SC-59 Dim A B Min 2.70 1.40 1.00 0.35 1.70 0.00 0.10 0.20 0.85 2.40 Max 3.10 1.60 1.30 0.50 2.10 0.10 0.26 0.60 1.15 2.80 B C D G H J K 1 D G C H J K L S Marking All Dimension in mm A6- Absolute Maximum Ratings at TA = 25 C o Parameter Reverse Voltage Repetitive Reverse Voltage Forward Current Repetitive Forward Current Forward Surge Current (1ms) Total Power Dissipation Operating Junction and Storage Temperature Range Symbol VR VRR IF IFR IFSM PD Tj, Tstg Ratings 75 85 250 500 1000 200 -65~+150 Unit V V mA mA mW mW o C Characteristics Charact erist ic at TA = 25 : Symbol V(BR) VF(1) VF(2) VF(3) VF(4) IR CT Trr M in. 75 M ax. 715 855 1000 1250 1 2 6 Unit V mV mV mV mV uA pF nS IR=100uA IF=1mA IF=10mA IF=50mA IF=150mA VR=75V VR=0, f=1MH z IF=IR =10mA, RL=100 Ł measur ed at IR=1mA Test Conditions R evers e Br eakdown Voltage For ward Voltage R evers e C urr ent Total C apacitanc e R evers e R ec over y Time http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 2 SBAS16 High-Speed Elektronische Bauelemente Switching Diode Characteristics Curve http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 2