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SCD32

SCD32

  • 厂商:

    SECOS

  • 封装:

  • 描述:

    SCD32 - VOLTAGE 20V ~ 60V 3.0 AMP Surface Mount Schottky Barrier Rectifiers - SeCoS Halbleitertechno...

  • 数据手册
  • 价格&库存
SCD32 数据手册
SCD32 Elektroni sche Bauelemente THRU SCD36 VOLTAGE 20V ~ 60V 3.0 AMP Sur f ace Mount Schottky Barrier Rec tifiers RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free 2010 .181(4.60) FEATURES * * * * * * * * * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Low profile package Built-in strain relief Metal to silicon rectifier , majority carrier conduction Low power loss , High efficiency High current capability High surge capacity For using in low voltage high frequency switching power supply, inverters , free wheeling , and polarity protection applications 0.091(2.30) 0.083(2.10) .173(4.40) .002(0.05) .50 ) R 2 0.0 0(0 0.049(1.25) 0.033(0.85) 0.049(1.25) 0.033(0.85) 0.049(1.25) 0.033(0.85) MECHANICAL DATA * Case : Packed with FRP substrate and epoxy underfilled * Ter m i n al s : Solder plated , solderable per MIL-STD-750, Method 2026 * Polarit y : Laser marking * Weight : 0.02 gram * Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating 25 ℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. TYPE NUMBER Maximum Recurrent Peak Reverse Voltage Working Peak Reverse Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current (See FIG. 1) Peak Forward Surge Current, 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Maximum Instantaneous Forward Voltage at 3.0A (Note1) 。 Maximum DC Reverse Current (Note1) Ta=25 C 。 at Rated DC Blocking Voltage Ta=100 C Typical Thermal Resistance (Note 2) Operating Temperature Range Storage Temperature Range SYMBOLS VRRM VRMS VDC I(AV) IFSM VF IR RθJA RθJL TJ TSTG SCD32 SCD33 SCD34 SCD36 UNITS 20 20 20 30 30 30 3.0 80 0.50 0.5 20 55 17 -50 ~ +125 -65 ~ +150 40 40 40 60 60 60 V V V A A 0.70 10 V mA ℃ /W ℃ ℃ NOTES: 1. 2. Pulse test width PW=300 usec, 1% duty cycle. Mounted on P.C. board with 0.2 x 0.2” (5.0 x 5.0mm) copper pad areas. http://www.SeCoSGmbH.c om/ 01-Jun-2002 Rev. A Any changi ng of specification will not be informed individual Page 1 of 2 SCD32 Elektroni sche Bauelemente THRU SCD36 VOLTAGE 20V ~ 60V 3.0 AMP Sur f ace Mount Schottky Barrier Rec tifiers FIG.1 - FORWARD CURRENT DERATING CURVE 3.0 80 70 60 50 40 30 20 10 0 1 FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT AVERAGE FORWARD RECTIFIED CURRENT, AMPERES 2.0 RESISTIVE OR INDUCTIVE LOAD P.C.B. MOUNTED ON 0.2X0.2"(5.0X5.0mm) COPPER PAD AREAS SCD36 PEAK FORWARD SURGE CURRENT, AMPERES 8.3ms Single Half Sine-Wave (JEDEC Method) 1.0 SCD32~SCD34 0 0 50 70 90 110 130 o 150 170 10 NUMBER OF CYCLES AT 60Hz 100 LEAD TEMPERATURE, C FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 10.00 100 FIG.4 - TYPICAL REVERSE CHARACTERISTICS IINSTANTANEOUS FORWARD CURRENT, AMPERES INSTANTANEOUS REVERSE CURRENT, MILLIAMPERES 10 1.00 SCD32~SCD34 SCD36 1.0 TJ=100 C o 0.10 0.10 0.01 TJ=25 C o 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 .001 0 20 40 60 80 100 INSTANTANEOUS FORWARD VOLTAGE, VOLTS PERCENT OF RATED PEAK REVERSE VOLTAGE,% 500 FIG.5 - TYPICAL JUNCTION CAPACITANCE TJ = 25 C f=1.0MHz Vsig=50mVP-P o JUNCTION CAPACITANCE, pF 100 10 .1 1.0 10 100 REVERSE VOLTAGE, VOLTS http://www.Se C oSGm bH.c om/ 01-Jun-2002 Rev. A Any changi ng of specification will not be informed individual Page 2 of 2
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