SCG3019

SCG3019 Elektronische Bauelemente N-Channel Enhancement MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-523 FEATURES      Low on-resistance. Fast switching speed. Low voltage drive makes this device ideal for portable equipment. Easily designed drive circuits. Easy to parallel. EQUIVALENT CIRCUIT REF. A B C D G J Millimeter Min. Max. 1.50 1.70 0.75 0.95 0.60 0.80 0.23 0.33 0.50BSC 0.10 0.20 REF. K M N S Millimeter Min. Max. 0.30 0.50 o --10 o --10 1.50 1.70 MAXIMUM RATINGS (TA=25℃ unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Total Power Dissipation Operating Junction Temperature Range Operating Storage Temperature Range Thermal Resistance, Junction to Ambient SYMBOL VDSS VGSS ID PD TJ TSTG RθJA RATING 30 ±20 0.1 0.15 150 -55~150 833 UNIT V V A W °C °C °C / W DEVICE MARKING KN http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 04-May-2010 Rev. A Page 1 of 4 SCG3019 Elektronische Bauelemente N-Channel Enhancement MOSFET ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Gate Threshold Voltage Static Drain-Source On Resistance Forward transfer admittance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time SYMBOL BVDSS IDSS IGSS VGS(th) RDS(ON) gfs Ciss Coss Crss Td(ON) Tr Td(OFF) Tf MIN 30 0.8 20 - TYP 13 9 4 15 35 80 80 MAX 1 ±1 1.5 8 13 - UNIT V μA μA V Ω mS TEST CONDITIONS VGS = 0V, ID = 10μA VDS = 30V, VGS = 0V VGS= ±20V, VDS=0V VDS= 3V, ID=100μA VGS= 4V, ID = 10mA VGS= 2.5V, ID = 1mA VDS= 3V, ID = 10mA Off Characteristics Dynamic Characteristics pF VDS= 5V, VGS= 0V, f= 1MHz Switching Characteristics nS VGS= 5V, VDD= 5V, ID= 10mA, RG= 10Ω, RL= 500Ω http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 04-May-2010 Rev. A Page 2 of 4 SCG3019 Elektronische Bauelemente N-Channel Enhancement MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 04-May-2010 Rev. A Page 3 of 4 SCG3019 Elektronische Bauelemente N-Channel Enhancement MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 04-May-2010 Rev. A Page 4 of 4