SCS202NF

Elektronische Bauelemente RoHS Compliant Product Dual Series Chips Surface Mount Switching Diode SCS202NF A suffix of "-C" specifies halogen & lead-free Application Ultra high speed switching 1 2 1 3 2 Marking code: MU or A3 D V 3 A L 3 Features Four types of packaging are availabl e. High speed. (trr=1.5ns Typ.) Suitable for high packing density layout. High reliability. 1 Top View 2 BS G C H K J Construction Silicon epitaxial planar SOT-323(SC-70) Dim Min 1.800 1.150 0.800 0.300 1.200 0.000 0.100 0.350 0.590 2.000 0.280 Max 2.200 1.350 1.000 0.400 1.400 0.100 0.250 0.500 0.720 2.400 0.420 MAXIMUM RATINGS (EACH DIODE) Rating Peak reverse voltage DC reverse voltage Peak forward current Mean rectifying current Surge current 1uS Power dissipation (TOTAL) Junction temperature Storage temperature Symbol V RM VR I FM Io I surge Pd Tj T stg V alue 80 80 300 100 4 200 150 -55~+155 Unit V V mA mA A mW ºC ºC A B C D G H J K L S V All Dimension in mm ELECTRICAL CHARACTERISTICS (TA=25 unless otherwise noted) (EACH DIODE) Characteristic Symbol Min Max Unit Forward voltage (IF = 100mA) VF － 1.2 V Reverse current (VR = 70V) IR － 0.1 uA Capacitance between terminals (V=6V, f=1MHz) CT － 3.5 pF Reverse recovery time (IF=5mA,VR=6V) t rr － 4 nS 1. FR– 5 = 1.0 X 0.75 X 0.062 in. http://www.SeCoSGmbH.com 2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina. Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 3 Elektronische Bauelemente Dual Series Chips Surface Mount Switching Diode SCS202NF Electrical characteristic curves (Ta=25 ºC) 10 REVERSE RECOVERY TIME : trr (ns) POWER DISSIPATION : Pd / Pd Max.(%) 125 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 VR=6V 100 75 50 25 0 0 8 9 10 25 50 75 100 125 150 FORWARD CURRENT : IF (mA) AMBIENT TEMPERATURE :Ta (ºC) Fig.1 Power attenuation curve Fig.2 Reverse recovery time 1000 FORWARD CURRENT : IF (mA) REVERSE CURRENT : IR (nA) 20 10 5 2 1 0.5 0.2 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Ta=85ºC 50ºC 25ºC Ta=100°C 75°C 50°C CAPACITANCE BETWEEN TERMINALS : CT (pF) 50 f=1MHz 100 4 10 25°C 0°C 0ºC −30ºC 1 2 −25°C 0.1 0.01 0 10 20 30 40 50 60 70 80 0 0 2 4 6 8 10 12 14 16 18 20 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) REVERSE VOLTAGE : VR (V) Fig.3 Forward characteristics Fig.4 Reverse characteristics Fig.5 Capacitance between terminals characteristics 0.01µF D.U.T. PULSE GENERATOR OUTPUT 50Ω 5Ω 50Ω SAMPLING OSCILLOSCOPE INPUT 100ns OUTPUT trr 0 Fig.6 Reverse recovery time (trr) measurement circuit http://www.SeCoSGmbH.com 0.1IR IR Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 3