SCS202NF_09

SCS202NF Elektronische Bauelemente 80 V, 300 mA Plastic-Encapsulated, Dual Series Chips Small Signal Switching Diode RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES Ultra high speed switching High reliability Suitable for high packaging density layout Fast reverse recovery time : trr = 1.5ns (typ.) Construction: silicon epitaxial planar SOT-323 A 3 3 L Top View 1 2 CB 1 2 PACKAGING INFORMATION Four types of packaging are available Weight: 0.0078 g (Approx.) K E D F G Millimeter Min. Max. 2.00 2.20 2.15 2.45 1.15 1.35 0.90 1.10 1.20 1.40 H J Millimeter Min. Max. 0.20 0.40 0.525 REF. 0.08 0.15 REF. REF. F G H J MARKING CODE N , A3 A B C D E ABSOLUTE MAXIMUM RATINGS (each diode) Parameter Peak Reverse Voltage DC Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current 1μS Total Power Dissipation Junction, Storage Temperature Symbol VRM VR IFM IO ISURGE PD TJ, TSTG Ratings 80 80 300 100 4 200 +150, -55 ~ +150 Unit V V mA mA A mW °C ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified)(each diode) Parameter Forward Voltage Reverse Voltage Leakage Current Diode Capacitance Reverse Recovery Time Symbol VF IR CT TRR Min. - Typ. - Max. 1.2 0.1 3.5 4.0 Unit V μA pF nS Test Conditions IF = 100 mA VR = 70V VR = 6 V, f = 1 MHz VR = 6 V, IF = 5 mA Notes: 1. FR–5 = 1.0 X 0.75 X 0.062 in. 2. Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina. 01-April-2009 Rev. B Page 1 of 2 SCS202NF Elektronische Bauelemente 80 V, 300 mA Plastic-Encapsulated, Dual Series Chips Small Signal Switching Diode CHARACTERISTIC CURVES SCS202NF POWER DISSIPATION : Pd / Pd Max.(%) REVERSE RECOVERY TIME : trr (ns) 125 10 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 VR=6V 100 75 50 25 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE :Ta (ºC) FORWARD CURRENT : IF (mA) Fig.1 Power attenuation curve Fig.2 Reverse recovery time 1000 FORWARD CURRENT : IF (mA) REVERSE CURRENT : IR (nA) 20 10 5 2 1 0.5 0.2 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Ta=85ºC 50ºC 25ºC Ta=100°C 75°C 50°C CAPACITANCE BETWEEN TERMINALS : CT (pF) 50 f=1MHz 4 100 10 25°C 0°C 25°C 0ºC 30ºC 1 2 0.1 0.01 0 10 20 30 40 50 60 70 80 0 0 2 4 6 8 10 12 14 16 18 20 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) REVERSE VOLTAGE : VR (V) Fig.3 Forward characteristics Fig.4 Reverse characteristics Fig.5 Capacitance between terminals characteristics 0.01μF D.U.T. PULSE GENERATOR OUTPUT 50 5 50 SAMPLING OSCILLOSCOPE INPUT 100ns OUTPUT trr 0 Fig.6 Reverse recovery time (trr) measurement circuit 01-April-2009 Rev. B 0.1IR IR Page 2 of 2