SCS202PD

Elektronische Bauelemente RoHS Compliant Product Dual Series Chips Surface Mount Switching Diode SCS202PD A suffix of "-C" specifies halogen & lead-free Application Ultra high speed switching A 3 L S C ATHODE 3 Top View Features Four types of packaging are availabl e. High speed. (trr=1.5ns Typ.) Suitable for high packing density layout. High reliability. Construction Silicon epitaxial planar ANODE 2 1 S C -5 9 2 1 B 1 2 C ATHODE 3 V G D J K Marking code: MO H C SC-59 MAXIMUM RATINGS (EACH DIODE) Rating Peak reverse voltage DC reverse voltage Peak forward current Mean rectifying current Surge current Power dissipation (TOTAL) Junction temperature Storage temperature P / N Type Symbol V RM (V) V R (V) I FM (mA) I o (mA) I surge (A) P d (mW) T j(ºC) T stg(ºC) V alue 80 80 300 100 4 200 150 -55~+155 N mW mW ºC ºC Dim Unit Vdc Vdc mAdc Min 2.700 1.300 1.000 Max 3.100 1.700 1.300 A B C D G H J K L S V 0.350 1.700 0.000 0.100 0.200 1.250 2.250 0.400 0.500 2.300 0.100 0.260 0.600 1.650 3.000 0.450 All Dimension in mm ELECTRICAL CHARACTERISTICS (TA=25 unless otherwise noted) (EACH DIODE) Characteristic Symbol Min Max Unit Forward voltage (I F = 100) VF (V) － 1.2 Vdc Reverse current (I R = 70uA) IR － 0.1 µAdc Capacitance between terminals (V R = 6, f = 1.0 MHz) CT(pF) － 3.5 mVdc Reverse recovery time (V R = 6, f = 5.0 MHz) t rr(ns) － 4 1. FR– 5 = 1.0 X 0.75 X 0.062 in. http://www.SeCoSGmbH.com 2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina. Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 3 Elektronische Bauelemente Electrical characteristic curves (Ta=25 ºC) Dual Series Chips Surface Mount Switching Diode SCS202PD P OWE R DIS S IP AT ION : P d / P d Max.(%) 125 50 100 F OR WAR D C UR R E NT : I F ( mA) 20 10 5 2 1 0.5 0.2 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 T a=85 ºC 50 ºC 25 ºC 75 50 0 ºC 3 0 ºC 25 0 0 25 50 75 100 125 150 AMB IE NT T E MP E R AT UR E :T a ( ºC ) F OR WAR D V OLT AG E : V F ( V ) P ower attenuation curve F orward characteris tics CAPACITANCE BETWEEN TERMINALS : C T ( pF) 1000 R E V E R S E C UR R E NT : I R ( nA) T a 1 00 C 75 C 50 C f=1MHz 4 100 10 25 C 0C 25 C 1 2 0.1 0.01 0 10 20 30 40 50 60 70 80 0 0 2 4 6 8 10 12 14 16 18 20 REVERSE VOLTAGE : V R ( V) R E V E R S E V OLT AG E : V R ( V ) R evers e characteris tics Capacitance between terminals characteristics http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 3 SCS202PD Elektronische Bauelemente Dual Series Chips Surface Mount Switching Diode 0 .01µF D.U.T . 10 rr ( ns) 9 8 7 V R =6V P ULS E G E NE R AT OR OUT P UT 50 5 50 S AMP LING OS C ILLOS C OP E REVERSE RECOVERY TIME : t 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 IR OUT P UT trr 0 INP UT 100ns FORWARD CURRENT : I F ( mA) Reverse recovery time R evers e recovery time (trr) meas urement circuit http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A 0.1I R Page 3 of 3