SCS21DSTL

SCS21DSTL Elektronische Bauelemente 0.2A , 200V Plastic-Encapsulated Switching Diode RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION Epitaxial planar Silicon diode LC D WBFBP-03D E FEATURES Fast Switching Speed Ultra-Small Surface Mount Package For General Purpose Switching Applications High Conductance D B H F APPLICATIONS High Conductance Ultra Fast Diode For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) REF. A B C D E F A Millimeter Min. Max. 0.950 1.050 0.950 1.050 0.010 0.070 0.210 0.310 0.350 REF. 0.680 REF. K J REF. G H J K L Millimeter Min. Max. 0 .0 5 0 0.510 0.610 0.250 0.350 0.050 0.450 0.550 G MARKING T3 TOP VIEW PACKAGE INFORMATION Package W BFBP-03D MPQ 5K Leader Size 7 inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameters Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Forward Continuous Current Average Rectified Output Current Non-Repetitive Peak Forward Surge Current Power Dissipation Thermal Resistance, Junction to Ambient Operating Junction and Storage Temperature t=1.0µs t=1.0s IFSM PD RθJA TJ,TSTG Symbol VRRM VRWM VR IFM IO Rating 200 200 200 400 200 2.5 Unit V V V mA mA A 0.5 100 1250 150, -65~150 mW ° /W C ° C http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 21-Jul-2011 Rev. A Page 1 of 2 SCS21DSTL Elektronische Bauelemente 0.2A , 200V Plastic-Encapsulated Switching Diode ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameters Forward Voltage Reverse breakdown voltage Capacitance between terminals Maximum DC Reverse Current at rated DC blocking voltage Maximum Reverse Recovery Time Symbol VF1 VF2 V(BR) CT IR TRR Min. 200 - Max. 1 1.25 5 0.1 50 Unit V V V pF µA nS Test Conditions IF=100mA IF=200mA IR=100µA VR=0, f=1MHz VR=200V IF=IR=30mA CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 21-Jul-2011 Rev. A Page 2 of 2