SCS222DSTL

SCS222DSTL Elektronische Bauelemente 0.1A , 80V Plastic-Encapsulated Switching Diode RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION Epitaxial planar Silicon diode D WBFBP-03D E FEATURES High speed. (TRR=1.5ns Typ.) Suitable for high packing density layout High reliability. LC D B H F APPLICATIONS Ultra high speed switching For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) REF. A K J G MARKING N A B C D E F Millimeter Min. Max. 0.950 1.050 0.950 1.050 0.010 0.070 0.210 0.310 0.350 REF. 0.680 REF. REF. G H J K L Millimeter Min. Max. 0 .0 5 0 0.510 0.610 0.250 0.350 0.050 0.450 0.550 PACKAGE INFORMATION Package W BFBP-03D MPQ 5K Leader Size 7 inch TOP VIEW ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameters Peak Repetitive Reverse Voltage DC Reverse Voltage Forward Continuous Current Average Rectified Output Current Power Dissipation Operating Junction and Storage Temperature Symbol VRM VR IFM IO PD TJ,TSTG Rating 80 80 300 100 100 150, -65~150 Unit V V mA mA mW ° C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameters Reverse breakdown voltage Maximum DC Reverse Current at rated DC blocking voltage Forward Voltage Diode Capacitance Maximum Reverse Recovery Time Symbol V(BR) IR VF CD TRR Min. 80 - Max. 0.1 1.2 3.5 4 Unit V µA V pF nS Test Conditions IR=100µA VR=70V IF=100mA VR=6V, f=1MHz VR=6V, IF=5mA http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 21-Jul-2011 Rev. A Page 1 of 2 SCS222DSTL Elektronische Bauelemente 0.1A , 80V Plastic-Encapsulated Switching Diode CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 21-Jul-2011 Rev. A Page 2 of 2