SCS411SDF

SCS411SDF Elektronische Bauelemente VOLTAGE 40 V, 0.5 A Small Signal Schottky Barrier Diode RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 DESCRIPTION The SCS411SDF is designed for low power rectification. 1 A L 3 3 Top View 2 CB 1 2 K E D MARKING: 05T K 3 F G H J 05T REF. 1 A 2 NC A B C D E F Millimeter Min. Max. 1.80 2.20 1.80 2.45 1.15 1.35 0.80 1.10 1.20 1.40 0.20 0.40 REF. G H J K L Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.25 0.650 TYP. MAXIMUM RATINGS(TA=25°C unless otherwise specified.) PARAMETER Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Peak Forward Surge Current at 8.3mSec Single Half Sine-Wave Typical Junction Capacitance between Terminal 1 Maximum Average Forward Rectified Current Total Power Dissipation Junction & Storage Temperature SYMBOL VRRM VRMS VDC IFSM CJ IO PD TJ,TSTG VALUE 40 28 20 3.0 20 0.5 225 125, -40~125 UNIT V V V A pF A mW ° C ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise specified.) PARAMETER Reverse Breakdown Voltage Maximum Instantaneous Forward Voltage SYMBOL V(BR)R VF MIN 40 - MAX 300 500 30 UNIT V mV mV µA Maximum Average Reverse Current IR Note: 1. Measured at 1.0 MHz and applied reverse voltage of 10 volts. 2. ESD sensitive product handling required. IR=100µA IF1=10mA IF2=500mA VR=10V TEST CONDITION http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 26-Nov-2009 Rev. A Page 1 of 2 SCS411SDF Elektronische Bauelemente VOLTAGE 40 V, 0.5 A Small Signal Schottky Barrier Diode CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 26-Nov-2009 Rev. A Page 2 of 2