SCS521S

SCS521S Elektronische Bauelemente RoHS Compliant Product Schottky Barrier Diode FEATURES . . . . . A suffix of "-C" specifies halogen & lead-free SOD-523 Low current rectification and high speed switching CATHODE MARK MECHANICAL DATA Extremely small surface mounting type. (EMD2) Io=200mA guaranteed despite the size. Low VF .(VF =0.40V Typ. At 200mA) Silicon epitaxial planer 1.2±0.05 1.6±0.1 0.8±0.05 0.6±0.1 Dimensions in millimeters C 0.3±0.05 0.12±0.05 MAXIMUM RATINGS (TJ = 25 °C unless otherwise noted) Rating DC reverse voltage Mean rectifying current Peak forward surge current Junction Temperature Storage Temperature Range Symbol VR Io IFSM TJ Tstg Value 30 200 1 125 – 40 to +125 Unit Volts mA A °C °C ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) (EACH DIODE) Characteristic Forward voltage ( IF = 200mA) Reverse current ( VR = 10V) Symbol VF IR Min – – Typ – – Max 0.50 30 Unit Volts mA http://www.SeCoSGmbH.com Any changing of specification will not be informed individua l 01-Jul -2009 Rev. B Page 1 of 2 SCS521S Elektronische Bauelemente Schottky Barrier Diode Electrical characteristic curves (Ta=25 C) 1 FORWARD CURRENT : IF (A) 10m Ta=125°C REVERSE CURRENT : IR (A) 100m 5° C 1m 75°C 100 m 10m 1m 100n 10n -25 °C 25°C 12 °C 10m 1m 100µ 10µ 1µ 0 Ta = 75 25 0.1 0.2 -2 5° C 0.3 °C 0.4 0.5 0.6 0 10 20 30 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) Figure 1. Forward characteristics Figure 2. Reverse characteristics CAPACITANCE BETWEEN TERMINALS : CT (pF) 100 50 Ta=25°C f=1MHz 100 Io CURRENT (%) 20 10 5 80 60 40 20 2 1 0 2 4 6 8 10 12 14 REVERSE VOLTAGE : VR (V) 0 0 25 50 75 100 125 AMBIENT TEMPERATURE : Ta (°C) Fig. 3 Capacitance between terminals characteristics Fig. 4 Derating curve (mounting on glass epoxy PCBs) http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jul-2009 Rev. A Page 2 of 2