SCS751DS

SCS751DS Elektronische Bauelemente 30 mA, 40 V Plastic-Encapsulate Schottky Diodes RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION Silicon epitaxial planar FEATURES Small surface mounting type Low reverse current and low forward voltage High reliability DFNWB APPLICATION High speed switching For Detection For portable equipment: (i.e. Mobile phone, MP3, MD, CD-ROM, DVD-ROM, Note book PC, etc) REF. A B C D Millimeter Min. Max. 0.55 0.65 0.95 1.050.4 0.5 0 0.05 REF. E F G H Millimeter Min. Max. 0.15 0.35 0.05REF 0.4 0.6 0.65TYP M ARKING : Cathode - 5 +Anode M AXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS at TA = 25° C PARAMETER Peak Reverse Voltage DC Reverse Voltage Mean Rectifying Current Peak Forward Surge Current Junction, Storage Temperature SYMBOL VRM VR Io IFSM TJ, TSTG RATINGS 40 30 30 150 +125, -40 ~ +125 UNIT V V mA mA ° C ELECTRICAL RATING at TA = 25° C PARAMETERS Forward Voltage Reverse Current Capacitance between terminals SYMBOL VF IR CT MIN. TYP. M AX. 0.37 0.5 UNIT V µA pF TEST CONDITIONS IF = 1mA VR = 30V VR = 30V, f = 1MHZ 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 10-Nov-2009 Rev. A Page 1 of 2 SCS751DS Elektronische Bauelemente 30 mA, 40 V Plastic-Encapsulate Schottky Diodes RATINGS AND CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 10-Nov-2009 Rev. A Page 2 of 2