SDF920NE

SDF920NE Elektronische Bauelemente 11A, 20V, RDS(ON) 22 m Dual N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers,. printers, PCMCIA cards, cellular and cordless telephones DFN2x5 E H G C D B FEATURES     Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe DFN2x5 saves board space Fast switching speed High performance trench technology I F A N L O PACKAGE INFORMATION Package DFN2x5 MPQ 5K Leader Size 13’ inch J K M REF. A B C D E F G H Millimeter Min. Max. 0.70 0.80 0.00 0.06 0.10 0.20 0° 12° 5.00 BSC 4.50 BSC 0.50 BSC 0.20 0.30 REF. I J K L M N O Millimeter Min. Max. 2.00 BSC 1.30 1.55 2.60 2.86 1.67 BSC 0.15 BSC 0.40 0.60 0.00 0.10 2KV MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Symbol VDS VGS TA = 25°C TA = 70°C ID IDM IS PD TJ, TSTG TA = 25°C TA = 70°C Value 20 ±12 11 8.5 ±40 3.1 3.5 1.8 -55~150 36 76 Unit V V A A A A W W °C °C / W °C / W Continuous Source Current (Diode Conduction) 1 Total Power Dissipation 1 Operating Junction & Storage Temperature Range t≦10 sec Steady State Thermal Resistance Ratings Maximum Junction-to-Ambient 1 RθJA Notes 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 20-Apr-2011 Rev. A Page 1 of 4 SDF920NE Elektronische Bauelemente 11A, 20V, RDS(ON) 22 m Dual N-Ch Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Gate Threshold Voltage Gate-Body Leakage Current Zero Gate Voltage Drain Current On-State Drain Current 1 Drain-Source On-Resistance 1 Forward Transconductance 1 Diode Forward Voltage Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Symbol VGS(th) IGSS IDSS ID(on) RDS(ON) gfs VSD Qg Qgs Qgd Td(on) Tr Td(off) Tf Min. 0.5 20 10 10.5 11 - Typ. Static 18 19 23 22 0.7 Max. ±10 1 30 22 23 28 - Unit V μA μA A mΩ S V Teat Condition VDS=VGS, ID=250μA VDS=0, VGS= ±12V VDS=16V, VGS=0 VDS=16V, VGS=0, TJ=55°C VDS=5V, VGS=4.5V VGS=4.5V, ID=6.7A VGS=4V, ID=5.6A VGS=2.5V, ID=4.5A VDS=15V, ID=6A IS=0.5A, VGS=0 Dynamic 2 9.2 1.9 2.8 1.7 2.3 1.1 4.4 nC ID=6A, VDS=10V, VGS=4.5V nS VDD=10V, VGEN=4.5V ID=1A, RL=15Ω Notes 1. Pulse test：PW ≦ 300μs duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 20-Apr-2011 Rev. A Page 2 of 4 SDF920NE Elektronische Bauelemente 11A, 20V, RDS(ON) 22 m Dual N-Ch Enhancement Mode Power MOSFET RATINGS AND CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 20-Apr-2011 Rev. A Page 3 of 4 SDF920NE Elektronische Bauelemente 11A, 20V, RDS(ON) 22 m Dual N-Ch Enhancement Mode Power MOSFET RATINGS AND CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 20-Apr-2011 Rev. A Page 4 of 4