SDN520C

SDN520C Elektronische Bauelemente N-Ch: 4.5 A, 20 V, RDS(ON) 58 mΩ P-Ch: -4.5 A, -20 V, RDS(ON) 112 mΩ N & P-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell Density trench process to provide low RDS(on) and to assures minimal power loss and heat dissipation. DFN2x2-6L FEATURES Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe DFN2X2_6L saves board space. Fast switching speed. High performance trench technology. APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. REF. A B C D E F Millimeter Typ. 2.00 BSC. 2.00 BSC. 0.75 0.675 0.25 0.30 0.81 0.86 Min. 0.65BSC Max. REF. G H J K L P Min. 0.23 0.80 0.35 0.91 Millimeter Typ. Max. 0.30 0.38 0.65BSC 0 0.05 0.15 0.20 0.25 0.30 0.25 0.35 0.60 0.65 0.70 TOP VIEW ABSOLUTE MAXIMUM RATINGS(TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 2 1 Symbol VDS VGS TA=25℃ TA=70℃ ID IDM IS PD TJ, Tstg Ratings N-Channel P-Channel Unit V V A A A W ℃ Pulsed Drain Current 1 Continuous Source Current (Diode Conduction) TA=25℃ 1 Power Dissipation TA=70℃ Operating Junction and Storage Temperature Range 20 ±8 4.5 4.5 8 4.5 6.5 5 -55 ~ +150 -20 ±8 -4.5 -4.5 -8 -4.5 Parameter Maximum Junction to Ambient 1 Thermal Resistance Rating Symbol t ≦ 5 sec Steady State RθJA Typ 52 12.5 Max 65 16 Unit ℃/W Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 4-Jul-2011 Rev. A Page 1 of 2 SDN520C Elektronische Bauelemente N-Ch: 4.5 A, 20 V, RDS(ON) 58 mΩ P-Ch: -4.5 A, -20 V, RDS(ON) 112 mΩ N & P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Gate-Threshold Voltage N-Ch P-Ch Gate-Body Leakage Current N-Ch P-Ch N-Ch Zero Gate Voltage Drain Current P-Ch N-Ch P-Ch On-State Drain Current 1 Symbol VGS(th) Min. 1 -1 Typ. 10 5 0.80 -0.83 2 Max. 100 -100 1 -1 10 -10 58 112 82 172 - Unit V Test Conditions VDS=VGS, ID=250uA VDS=VGS, ID= -250uA IGSS - uA VDS= 0 , VGS= 8 V VDS= 0 , VGS= -8 V VDS=16 V, VGS=0 IDSS - uA VDS=-16V, VGS=0 VDS=16V, VGS=0 , TJ=55℃ VDS= -16V, VGS=0 , TJ=55℃ N-Ch P-Ch N-Ch ID(on) 5 -5 - A VDS = 5V, VGS=4.5 V VDS = -5V, VGS= -4.5 V VGS=4.5V, ID= 1A Drain-Source On-Resistance 1 P-Ch N-Ch P-Ch RDS(ON) - m VGS=-4.5V, ID= 1A VGS=2.5V, ID= A VGS=-2.5V, ID= -1A Forward Transconductance 1 N-Ch P-Ch gfs - S VDS= 5V, ID= 1A VDS= -5V, ID= 11A Diode Forward Voltage 1 N-Ch P-Ch VSD - S IS= 1.05A, VGS= 0 IS= -1.05A, VGS= 0 Dynamic Total Gate Charge N-Ch P-Ch Gate-Source Charge N-Ch P-Ch Gate-Drain Charge N-Ch P-Ch N-Ch Turn-on Delay Time P-Ch Rise Time N-Ch P-Ch Turn-off Delay Time N-Ch P-Ch N-Ch Fall Time P-Ch Tf Td(off) Tr Td(on) Qgd Qgs Qg - 7.5 3.8 0.6 0.6 1.0 1.5 5 5 12 15 13 20 7 20 nS nC N-Channel VDS=15V, VGS= 4.5V, ID= 2.7A P-Channel VDS= -15V, VGS= -4.5V, ID= -3.1A N-Channel VDD= 15V, RGEN= 15 , VGS= 4.5V, ID= 1A P-Channel VDD= -15V, RGEN= 15 VGS= -4.5V, ID= -1A Notes: 1. Pulse test: PW