SEF101M~SEF107M
Elektronische Bauelemente VOLTAGE 50 ~ 1000 V 1.0 Amp High Efficiency Recovery Rectifiers
RoHS Compliant Product A suffix of “-C” specifies halogen-free
FEATURES
SOD-123M
Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Low profile surface mounted application in order to optimize board space. High current capability. Fast switching for high efficiency. Glass passivated chip junction.
A B F D C E E
MECHANICAL DATA
Case: Molded plastic, SOD-123M / Mini SMA Epoxy: UL94-V0 rated flame retardant Terminals: Plated terminals, solderable per MIL-STD-750, Method 2026. Polarity: Indicated by cathode band Weight: 0.018 gram (Approximately)
Millimeter REF. Min. Max. 3.90 1.80 1.70 D E F REF.
Millimeter Min. Max.
MARKING CODE
Part Number Marking Code Part Number Marking Code
A B C
3.50 1.40 1.30
3.60 (Max.) 0.80 (Typ.) 0.30 (Typ.)
SEF101M SEF102M SEF103M SEF104M
H1 H2 H3 H4
SEF105M SEF106M SEF107M
H5 H6 H7
PACKAGE INFORMATION
Package SOD-123M MPQ 2.5K LeaderSize 7’ inch
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified.)
Part Number Parameter
Repetitive Peak Reverse Voltage (Max.) RMS Voltage (Max.) Continuous Reverse Voltage (Max.)
Symbol
VRRM VRMS VR
SEF 101M
50 35 50
SEF 102M
100 70 100
SEF 103M
200 140 200
SEF 104M
400 280 400
SEF 105M
600 420 600
SEF 106M
800 560 800
SEF 107M
1000 700 1000
Unit
V V V
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
09-Feb-2011 Rev. A
Page 1 of 3
SEF101M~SEF107M
Elektronische Bauelemente VOLTAGE 50 ~ 1000 V 1.0 Amp High Efficiency Recovery Rectifiers
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Part Number Parameter
Forward Voltage (Max.) Average Forward Rectified Current (Max.)
Symbol
VF IO
SEF 101M
SEF 102M
1
SEF 103M
SEF 104M
1.3 1
SEF 105M
SEF 106M
1.7
SEF 107M
Unit
V A
Testing Condition
Ambient Temperature =50°C
8.3ms single half sine-wave superimposed on rated load (JEDEC method)
Forward Surge Current DC Reverse Current at Rated DC Blocking Voltage (Max.) Thermal Resistance Junction to Ambient (Typ.) Diode Junction Capacitance (Typ.) Storage and Operating Temperature Range Reverse recovery time
IFSM
30 5 150 42 20 -65 ~ 175, -55 ~ 150 50 75
A
IR RJA CJ TSTG, TJ TRR
A °C/W pF °C nS
VR=VRRM, TA=25°C VR=VRRM,TA=100°C
f=1MHz and applied 4V DC reverse voltage
Note: 1. Reverse recovery time test condition, IF=0.5A, IR=1A, IRR=0.25A.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
09-Feb-2011 Rev. A
Page 2 of 3
SEF101M~SEF107M
Elektronische Bauelemente VOLTAGE 50 ~ 1000 V 1.0 Amp High Efficiency Recovery Rectifiers
RATINGS AND CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
09-Feb-2011 Rev. A
Page 3 of 3
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