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SEF105M

SEF105M

  • 厂商:

    SECOS

  • 封装:

  • 描述:

    SEF105M - 1.0 Amp High Efficiency Recovery Rectifiers - SeCoS Halbleitertechnologie GmbH

  • 数据手册
  • 价格&库存
SEF105M 数据手册
SEF101M~SEF107M Elektronische Bauelemente VOLTAGE 50 ~ 1000 V 1.0 Amp High Efficiency Recovery Rectifiers RoHS Compliant Product A suffix of “-C” specifies halogen-free FEATURES  SOD-123M     Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Low profile surface mounted application in order to optimize board space. High current capability. Fast switching for high efficiency. Glass passivated chip junction. A B F D C E E MECHANICAL DATA      Case: Molded plastic, SOD-123M / Mini SMA Epoxy: UL94-V0 rated flame retardant Terminals: Plated terminals, solderable per MIL-STD-750, Method 2026. Polarity: Indicated by cathode band Weight: 0.018 gram (Approximately) Millimeter REF. Min. Max. 3.90 1.80 1.70 D E F REF. Millimeter Min. Max. MARKING CODE Part Number Marking Code Part Number Marking Code A B C 3.50 1.40 1.30 3.60 (Max.) 0.80 (Typ.) 0.30 (Typ.) SEF101M SEF102M SEF103M SEF104M H1 H2 H3 H4 SEF105M SEF106M SEF107M H5 H6 H7 PACKAGE INFORMATION Package SOD-123M MPQ 2.5K LeaderSize 7’ inch ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified.) Part Number Parameter Repetitive Peak Reverse Voltage (Max.) RMS Voltage (Max.) Continuous Reverse Voltage (Max.) Symbol VRRM VRMS VR SEF 101M 50 35 50 SEF 102M 100 70 100 SEF 103M 200 140 200 SEF 104M 400 280 400 SEF 105M 600 420 600 SEF 106M 800 560 800 SEF 107M 1000 700 1000 Unit V V V http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 09-Feb-2011 Rev. A Page 1 of 3 SEF101M~SEF107M Elektronische Bauelemente VOLTAGE 50 ~ 1000 V 1.0 Amp High Efficiency Recovery Rectifiers ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Part Number Parameter Forward Voltage (Max.) Average Forward Rectified Current (Max.) Symbol VF IO SEF 101M SEF 102M 1 SEF 103M SEF 104M 1.3 1 SEF 105M SEF 106M 1.7 SEF 107M Unit V A Testing Condition Ambient Temperature =50°C 8.3ms single half sine-wave superimposed on rated load (JEDEC method) Forward Surge Current DC Reverse Current at Rated DC Blocking Voltage (Max.) Thermal Resistance Junction to Ambient (Typ.) Diode Junction Capacitance (Typ.) Storage and Operating Temperature Range Reverse recovery time IFSM 30 5 150 42 20 -65 ~ 175, -55 ~ 150 50 75 A IR RJA CJ TSTG, TJ TRR A °C/W pF °C nS VR=VRRM, TA=25°C VR=VRRM,TA=100°C f=1MHz and applied 4V DC reverse voltage Note: 1. Reverse recovery time test condition, IF=0.5A, IR=1A, IRR=0.25A. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 09-Feb-2011 Rev. A Page 2 of 3 SEF101M~SEF107M Elektronische Bauelemente VOLTAGE 50 ~ 1000 V 1.0 Amp High Efficiency Recovery Rectifiers RATINGS AND CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 09-Feb-2011 Rev. A Page 3 of 3
SEF105M 价格&库存

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