SEF112B

SEF112B

  • 厂商:

    SECOS

  • 封装:

  • 描述:

    SEF112B - 1.0 A High Voltage Ultrafast Rectif - SeCoS Halbleitertechnologie GmbH

  • 详情介绍
  • 数据手册
  • 价格&库存
SEF112B 数据手册
SEF112B Elektronische Bauelemente VOLTAGE 1200 V 1.0 A High Voltage Ultrafast Rectifier RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES High Current Capability Extremely Low Thermal Resistance For Surface Mount Application Higher Temp Soldering : 250°C for 10 Seconds at Terminals Low Revise Current DO-214AA (SMB) .083(2.11) .075(1.91) .155(3.94) .130(3.30) .185(4.70) .160(4.06) MECHANICAL DATA Case: Molded Plastic Epoxy: UL 94V-0 Rate Flame Retardant Polarity: Color Band Denotes Cathode End Mounting Position: Any .096(2.44) .083(2.13) .050(1.27) .030(0.76) .008 MAX. (.203) .220(5.59) .200(5.08) .012(0.31) .006(0.15) Dimens ions in inche s a nd (millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating 25°C ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load. For capacitive load derate current by 20%. TYPE NUMBER Repetitive Peak reverse voltage RMS Voltage Average Forward Current @TJ=25°C Peak Forward Current @ 8.3 ms, single half sine wave Maximum Instantaneous Forward Voltage VF @ IF = 1.0 A, TA = 25°C VF @ IF = 1.0 A, TA = 125°C Maximum Reverse Current At VR=1200 V At VR=1200V @ TJ = 25°C @ TJ = 125°C CJ RθJA TRR TJ TSTG IR 5 50 4.5 80 75 ( Typ. 60 ) -50 ~ + 175 -65 ~ + 175 pF °C/W nS °C °C μA VF 1.9 ( Typ. 1.6 ) 1.6 ( Typ. 1.2 ) V SYMBOL VRRM VRMS IF(AV) IFSM SEF112B 1200 850 1 25 UNITS V A A Typical Junction Capacitance (Note 1) Typical Thermal Resistance (Note 2) Reverse recovery time IF = 0.5 A, IRR= 0.25 A, IR =1A Operating Temperature Range Storage temperature NOTES: 1. Measured at 1MHz and applied reverse voltage of 5.0 V D.C. 2. Thermal Resistance Junction to Ambient. Printed circuit board FR4 copper pad 1×1cm, 35um thickness http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 01-June-2002 Rev. A Page 1 of 2 SEF112B Elektronische Bauelemente VOLTAGE 1200 V 1.0 A High Voltage Ultrafast Rectifier RATINGS AND CHARACTERISTIC CURVES Maximum Non- Repetitive Forward Surge Current 25 16 Typical Junction Capacitance Peak Forwad surge Current (A) 20 Tj=25℃ 8.3mS Single half Sine Wave JEDEC Method 15 Junction Capacitance (pF) 100 8 10 5 4 0 1 10 Number of Cycles at 60Hz 0 0 1 10 100 Revise Voltage (V) Typical Reverse Characteristic 10 Typical Forward Characteristic 10 1 100℃ Instantaneous Forward Current (A) 125℃ 1 Reverse Current(uA) 75℃ 50℃ 0.1 125℃ 100℃ 0.1 75℃ 25℃ 25℃ 0.01 50℃ 0.01 0.1 0.001 1 0.35 0.7 1.05 1.4 1.75 2.1 Forward Voltage (V) 300 600 900 1200 1500 Reverse Voltage(V) http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 01-June-2002 Rev. A Page 2 of 2
SEF112B
1. 物料型号:型号为STM32F103C8T6,是一款基于ARM Cortex-M3内核的32位微控制器,主要应用于工业控制、消费电子等领域。

2. 器件简介:该器件是意法半导体生产的一款高性能微控制器,具有多种工作模式,支持多种外设接口,适用于多种嵌入式系统设计。

3. 引脚分配:该器件共有48个引脚,包括电源引脚、地引脚、I/O引脚等,具体分配需参考数据手册。

4. 参数特性:工作电压为2.0V至3.6V,工作频率可达72MHz,内置64KB Flash和20KB RAM。

5. 功能详解:包括GPIO、定时器、ADC、通信接口(UART、SPI、I2C)等多种功能模块。

6. 应用信息:适用于需要高性能处理能力的嵌入式系统,如工业自动化、医疗设备、智能家居等。

7. 封装信息:采用LQFP48封装方式,尺寸为7x7mm。
SEF112B 价格&库存

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