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SEF201B

SEF201B

  • 厂商:

    SECOS

  • 封装:

  • 描述:

    SEF201B - 2.0AMP High Efficiency Recovery Rectifiers - SeCoS Halbleitertechnologie GmbH

  • 数据手册
  • 价格&库存
SEF201B 数据手册
SEF201B THRU SEF206B Elektronische Bauelemente VOLTAGE 50V ~ 800V 2.0AMP High Efficiency Recovery Rectifiers RoHS Compliant Product A suffix of "-C" specifies halogen-free DO-214AA(SMB) FEATURES * Ideal for surface mount applications * Easy pick and place * Built-in strain relief * Fast switching speed .083(2.11) .075(1.91) .155(3.94) .130(3.30) .185(4.70) .160(4.06) .012(0.31) .006(0.15) MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-0 rate flame retardant * Metallurgically bonded construction * Polarity: Color band denotes cathode end * Mounting position: Any * Weight: 1.02 grams .096(2.44) .083(2.13) .050(1.27) .030(0.76) .008 MAX. (.203) .220(5.59) .200(5.08) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating 25 C ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. TYPE NUMBER Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current .375"(9.5mm) Lead Length at Ta=55 C Peak Forward Surge Current, 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Maximum Instantaneous Forward Voltage at 2.0A Maximum DC Reverse Current Ta=25 C at Rated DC Blocking Voltage Ta=100 C Maximum Reverse Recovery Time (Note 1) Typical Junction Capacitance (Note 2) Thermal Resistance, Juntion to Lead (Note 3) Thermal Resistance, Juntion to Ambient (Note 3) Operating and Storage Temperature Range TJ, TSTG SEF201B SEF202B SEF203B SEF204B SEF205B SEF206B UNITS 50 35 50 100 70 100 200 140 200 2.0 50 400 280 400 600 420 600 800 560 800 V V V A A V µA 0.98 5.0 100 50 15 18 55 1.3 1.5 1.7 µA 70 nS pF C/W C -65 ~ +150 NOTES: 1. Reverse Recovery Time test condition: IF=0.5A, IR=1.0A, IRR=0.25A 2. Measured at 1MHz and applied reverse voltage of 4.0V D.C. 3. Rating applies when surface mounted on the minimum pad size recommended, PC Board with 7.0 X 7.0mm copper pad. http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 2 SEF201B THRU SEF206B Elektronische Bauelemente VOLTAGE 50V ~ 800V 2.0AMP High Efficiency Recovery Rectifiers RATING AND CHARACTERISTIC CURVES (SEF201B THRU SEF206B) FIG.1-TYPICAL FORWARD CHARACTERISTICS AVERAGE FORWARD CURRENT,(A) FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE 50 INSTANTANEOUS FORWARD CURRENT,(A) SEF204B 2.4 2.0 1.6 1.2 0.8 0.4 0 0 20 40 60 80 100 120 140 160 180 200 Single Phase Half Wave 60Hz Resistive Or Inductive Load SEF205B 10 3.0 SEF201B~SEF203B SEF206B 1.0 Tj=25 C Pulse Width 300us 1% Duty Cycle AMBIENT TEMPERATURE ( C) FIG.4-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PEAK FORWAARD SURGE CURRENT,(A) 50 0.1 .01 .6 .9 1.1 1.4 1.7 2.0 2.3 2.6 FORWARD VOLT AGE,(V) 40 FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTICS 50W NONINDUCTIVE 10W NONINDUCTIVE 30 20 Tj=25 C 8.3ms Single Half Sine Wave JEDEC method 10 (+) 25Vdc (approx.) () 1W NONINDUCTIVE OSCILLISCOPE (NOTE 1) D.U.T. () PULSE GENERATOR (NOTE 2) (+) 0 1 5 10 50 100 NUMBER OF CYCLES AT 60Hz NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms. FIG.5-TYPICAL JUNCTION CAPACITANCE 35 30 25 20 15 10 5 trr +0.5A | | | | | | | | 0 -0.25A JUNCTION CAPACITANCE,(pF) -1.0A 1cm SET TIME BASE FOR 50 / 10ns / cm 0 .01 .05 .1 .5 1 5 10 50 100 REVERSE VOLTAGE,(V) http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 2
SEF201B 价格&库存

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