SGM2310A

Elektronische Bauelemente 5 A, 60 V, RDS(ON) 115 mΩ N-Channel Enhancement Mode Power MOSFET SGM2310A RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 A Top View DESCRIPTION The SGM2310A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SGM2310A is universally used for all commercial-industrial applications. CB 1 2 3 4 K E L D FEATURES Simple drive requirement Super high density cell design for extremely low RDS(ON) F G Millimeter Min. Max. 4.40 4.60 4.05 4.25 2.40 2.60 1.40 1.60 3.00 REF. 0.40 0.52 H J Millimeter Min. Max. 0.89 1.20 0.35 0.41 0.70 0.80 1.50 REF. REF. A B C D E F REF. G H J K L MARKING 1 G = Date code 24 D 2310A 3 S ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current Power Dissipation Linear Derating Factor Operating Junction & Storage Temperature TJ, TSTG 1,2 SYMBOL VDS VGS ID @ TA = 25° C ID @ TA = 70° C IDM PD @ TA = 25° C RATINGS 60 ±20 5.0 4.0 10 1.5 0.01 -55~150 UNIT V V A A A W W/° C ° C THERMAL DATA PARAMETER Thermal Resistance Junction-Ambient3(Max). SYMBOL RθJA VALUE 83.3 UNIT ° /W C http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 16-Dec-2009 Rev. A Page 1 of 4 Elektronische Bauelemente 5 A, 60 V, RDS(ON) 115 mΩ N-Channel Enhancement Mode Power MOSFET SGM2310A ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) PARAMETER Drain-Source Breakdown Voltage Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current (TJ=25℃ ) Drain-Source Leakage Current (TJ=70℃ ) Static Drain-Source On-Resistance Total Gate Charge2 Gate-Source Charge Gate-Drain (“Miller”) Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward On Voltage2 Notes: 2 SYMBOL MIN BVDSS VGS(th) gfs IGSS IDSS RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss VSD 60 0.5 - TYP M AX UNIT 12 4.0 1.2 1.0 6 12 18 10 320 42 20 1.5 ±100 1 10 115 125 1.2 V pF nS nC V V S nA µA m TEST CONDITIONS VGS = 0, ID = 250µA VDS=VGS, ID=250µA VDS = 15V, ID = 4A VGS = ±20V VDS = 60 V, VGS = 0 VDS = 60 V, VGS = 0 VGS=10V, ID=5.0A VGS=4.5V, ID=4.5A ID = 4 A VDS = 30 V VGS =4.5 V VDD = 30 V ID =2.5 A VGS =10 V RG = 6 , RL = 12 VGS = 0 V VDS = 30 V f = 1.0 MHz SOURCE-DRAIN DIODE IS=2.5A, VGS=0V 1. Pulse width limited by Max. junction temperature. 2. Pulse width≦300µs, duty cycle≦2%. 3. Surface mounted on FR4 board, t ≦10sec. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 16-Dec-2009 Rev. A Page 2 of 4 Elektronische Bauelemente 5 A, 60 V, RDS(ON) 115 mΩ N-Channel Enhancement Mode Power MOSFET SGM2310A CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 16-Dec-2009 Rev. A Page 3 of 4 Elektronische Bauelemente 5 A, 60 V, RDS(ON) 115 mΩ N-Channel Enhancement Mode Power MOSFET SGM2310A CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 16-Dec-2009 Rev. A Page 4 of 4