SGM2501

SGM2501 -2.6A, -20V,RDS(ON) 200m Ω Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The SGM2301 provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The SOT-89 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage and battery power applications. SOT-89 Features * Surface Mount Device * Simple Drive Requirement REF. D G A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5° TYP. 0.70 REF. S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1,2 3 3 Symbol VDS VG S ID@TA=25 C ID@TA=70 C IDM PD@TA=25 oC o o Ratings -20 ±12 -2.6 -2.1 -10 1.5 0.012 Unit V V A A A W W/ C o o Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 C Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Max. Rthj-a Ratings 83.3 o Unit C /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 4 SGM2501 -2.6A, -20V,RDS(ON) 200m Ω Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 oC Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=70 C) o Symbol BVDSS BVDS/ Tj VGS(th) IGSS IDSS Min. -20 _ Typ. _ Max. _ _ Unit V V/ C V nA uA uA o Test Condition VGS=0V, ID=-250uA Reference to 25 C, ID=-1mA VDS=VGS, ID=-250uA VGS=± 12V VDS=-20V,VGS=0 VDS=-16V,VGS=0 VGS=-10 V, ID=-2.6A o -0.1 _ _ _ _ _ _ _ -0.5 _ _ _ _ _ ±100 -1 -10 200 250 300 10 _ _ Static Drain-Source On-Resistance 2 RDS(ON) _ _ mΩ VGS=-4.5V, ID=-2A VGS=-2.5V, ID=-1A ID=-2.8A VDS=-6.0V VGS=-5.0V Total Gate Charge 2 Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs _ _ _ _ _ _ _ _ _ _ 5.2 1.36 0.6 5.2 9.7 19 29 295 170 65 4.4 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance nC _ _ _ _ VDS=-15V ID=-1A nS VGS=-10V RG=6Ω RD=15Ω _ _ _ pF VGS=0V VDS=-6V f=1.0MHz _ _ S VDS=-5V, ID=-2.6A Source-Drain Diode Parameter Forward On Voltage 2 Symbol VSD Is ISM Min. _ _ Typ. _ _ Max. - 1 .2 -1 Unit V Test Condition IS=-1.6A,VGS=0V,Tj=25 C VD=VG=0V, VS=-1.2V G o Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 A _ _ - 10 A Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width≦300us, dutycycle≦2%. 3.Surface mounted on FR4 board, t ≦ 10sec. http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 4 SGM2501 -2.6A, -20V,RDS(ON) 200m Ω Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode http://www.SeCoSGmbH.com/ Fig 6. Gate Threshold Voltage v.s. Junction Temperature Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 4 SGM2501 -2.6A, -20V,RDS(ON) 200m Ω Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 4