SGM3055

SGM3055 Elektronische Bauelemente 15A, 30V,RDS(ON) 100mΩ N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The SOT-89 package is universally preferred for all commercial industrial surface mount applications and suited for low voltage applications such as DC/DC converters. SOT-89 D REF. A B C D E F S G Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5° TYP. 0.70 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 Symbol VDS VGS ID@TA=25 C ID@TA=100 C IDM PD@TA=25 C Tj, Tstg o o o Ratings 30 ±20 15 9 50 15 -55~+150 Unit V V A A A W o Total Power Dissipation Operating Junction and Storage Temperature Range C Thermal Data Parameter Thermal Resistance Junction-ambient Thermal Resistance Junction-case Max. Max. Symbol Rthj-a Rthj-c Ratings 42 3 o Unit C /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 6 SGM3055 Elektronische Bauelemente 15A, 30V,RDS(ON) 100mΩ N-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 oC) Static Drain-Source On-Resistance o o Symbol BVDSS BVDS/ Tj VGS(th) IGSS IDSS Min. 30 _ Typ. _ Max. _ _ Unit V V/ C V nA uA uA o Test Condition VGS=0V, ID=250uA Reference to 25 C, ID=1mA VDS=VGS, ID=250uA VGS=± 20V VDS=30V,VGS=0 VDS=24V,VGS=0 VGS=10V, ID= 8A VGS=4.5V, ID= 6A ID=8 A VDS=24V VGS= 5V o 0.037 _ _ _ _ _ _ 1.0 _ _ _ _ 3.0 ±100 25 250 80 100 _ _ _ _ RDS(ON) Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss _ _ _ _ mΩ Total Gate Charge 2 5.4 1.3 3.6 3.6 19.8 13 3.2 260 144 13 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 nC _ _ _ _ _ _ _ VDS=15V ID=8A nS VGS=10V RG=3.4Ω RD=1.9 Ω _ _ _ _ _ _ pF VGS=0V VDS=25V f=1.0MHz Source-Drain Diode Parameter Forward On Voltage 2 Symbol VS D IS ISM Min. _ _ Typ. _ Max. 1 .3 15 Unit V Test Condition IS=15 A,VGS=0V,Tj=25 C VD=VG=0V,VS=1.3V o Continuous Source Current(Body Diode) Pulsed Source Current(Body Diode) 1 _ _ A _ 50 A Notes: 1.Pulse width limited by safe operating area. 2.Pulse width≦300us, dutycycle≦2%. http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 6 SGM3055 Elektronische Bauelemente 15A, 30V,RDS(ON) 100mΩ N-Channel Enhancement Mode Power Mos.FET Characteristics Curve http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 6 SGM3055 Elektronische Bauelemente 15A, 30V,RDS(ON) 100mΩ N-Channel Enhancement Mode Power Mos.FET http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 6 SGM3055 Elektronische Bauelemente 15A, 30V,RDS(ON) 100mΩ N-Channel Enhancement Mode Power Mos.FET http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 5 of 6 SGM3055 Elektronische Bauelemente 15A, 30V,RDS(ON) 100mΩ N-Channel Enhancement Mode Power Mos.FET http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 6 of 6