SGM3055_11

SGM3055 Elektronische Bauelemente 6A , 30V , RDS(ON) 26 m N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The GM3055 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-89 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. A Top View SOT-89 CB 1 2 3 4 K E L D FEATURES     Fast Switching Dynamic dv/dt Rating Repetitive Avalanche Rated Simple Drive Requirement F REF. A B C D E F G Millimeter Min. Max. 4.40 4.60 4.05 4.25 2.40 2.60 1.40 1.60 3.00 REF. 0.40 0.52 H REF. G H J K L J Millimeter Min. Max. 0.89 1.20 0.35 0.41 0.70 0.80 1.50 REF. MARKING 3055   = Date code  D PACKAGE INFORMATION Package SOT-89 MPQ 1K Leader Size 7 inch  G  S ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Pulsed Drain Current Power Dissipation Linear Derating Factor Operating Junction & Storage Temperature TJ, TSTG 1,2 Symbol VDS VGS TA = 25°C TA = 70°C ID IDM PD Rating 30 ±20 6 4.8 20 1.2 0.016 -55~150 Unit V V A A A W W / °C °C Thermal Resistance Rating Thermal Resistance Junction-Ambient (Max). 3 RJA 104 °C / W http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 5-Aug-2011 Rev. B Page 1 of 4 SGM3055 Elektronische Bauelemente 6A , 30V , RDS(ON) 26 m N-Channel Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current TJ=25°C TJ=70°C △ Symbol BVDSS BVDSS /△TJ VGS(th) IGSS IDSS Min. Typ. 30 1 0.037 5.4 1.3 3.6 3.6 19.8 13 3.2 260 144 13 Max. 3 ±100 25 250 26 40 - Unit V Teat Conditions VGS=0, ID=250μA V / °C Reference to 25°C, ID=1mA V nA μA VDS=VGS, ID=250μA VGS= ±20V VDS=30V, VGS=0 VDS=24V, VGS=0 VGS=10V, ID=4A VGS=4.5V, ID=3A ID=4 A VDS=24V VGS=5V VDD=15V ID=1A VGS=10V RG=3.3Ω RD=1.9Ω VGS=0 VDS=30 V f=1.0 MHz Static Drain-Source On-Resistance Total Gate Charge 2 RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss mΩ Gate-Source Charge Gate-Drain (“Miller”) Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 nC nS pF Source-Drain Diode Forward On Voltage2 Continuous Source Current(Body Diode) Pulsed Source Current(Body Diode) 1 VSD IS ISM - - 1.3 4 20 V A A IS=2A, VGS=0, TJ=25°C VD=VG=0, VS=1.3V Notes: 1. Pulse width limited by safe operating area. 2. Pulse width≦300μs, duty cycle≦2%. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 5-Aug-2011 Rev. B Page 2 of 4 SGM3055 Elektronische Bauelemente 6A , 30V , RDS(ON) 26 m N-Channel Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 5-Aug-2011 Rev. B Page 3 of 4 SGM3055 Elektronische Bauelemente 6A , 30V , RDS(ON) 26 m N-Channel Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 5-Aug-2011 Rev. B Page 4 of 4