SID05N10

SID05N10 Elektronische Bauelemente 5A , 100V , RDS(ON) 170 mΩ N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen-free DESCRIPTION The SID05N10 provide the designer with the best combination of fast switching, The TO-251 package is universally preferred for all commercial-industrial surface mount applications. The device is suited for charger, industrial and consumer environment. TO-251 FEATURES Low On-resistance Fast Switching Speed Low-voltage drive (4V) W ide SOA (safe operating area) Easily designed drive circuits Easy to parallel 2 A B C D GE K F H MARKING: 05N10 Date code Drain M J P 1 Gate REF. A B C D E F 3 Source Millimeter Min. Max. 6.40 6.80 5.20 5.50 2.20 2.40 0.45 0.55 6.80 7.20 7.20 7.80 REF. G H J K M P Millimeter Min. Max. 5.40 5.80 0.90 1.50 2.30 0.60 0.90 0.50 0.70 0.45 0.60 ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 Symbol VDS VGS TC=25°C TC=100°C ID IDM PD RθJC RθJA Ratings 100 ±20 5 3.75 20 20 6.25 110 0.16 Unit V V A A A W °C / W °C / W W / °C °C Total Power Dissipation @ TC = 25°C Thermal Resistance Junction-case Thermal Resistance Junction-ambient Linear Derating Factor Operating Junction & Storage temperature TJ, TSTG -55~150 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 26-Dec-2011 Rev. A Page 1 of 4 SID05N10 Elektronische Bauelemente 5A , 100V , RDS(ON) 170 mΩ N-Channel Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Forward Trans-conductance Gate-Source Leakage Current Drain-Source Leakage Current TJ=25°C Static Drain-Source On-Resistance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 2 Symbol BVDSS VGS(th) gfs IGSS IDSS RDS(ON) Td(on) Tr Td(off) Tf Ciss Coss Crss Min 100 1 - Typ 4 9 9.4 26.8 2.6 975 38 27 Max 2.5 ±100 10 170 200 - Unit V V S nA uA m Test Conditions VGS=0, ID=1mA VDS=10V, ID=1mA VDS =10V, ID =2.5A VGS= ±20V VDS=100 V, VGS=0 VGS=10 V, ID=2.5A VGS=4V, ID=2.5A VDD=30V ID=1A VGS=10 V RG=6 RL=30 VGS=0 VDS=25V f =1 MHz nS pF Source-Drain Diode Forward On Voltage 2 VSD - - 1.5 V IS=5A, VGS=0 ,TJ=25 °C Notes: 1. Pulse width limited by maximum junction temperature. 2. Pulse width≦300us, duty cycle≦2% . http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 26-Dec-2011 Rev. A Page 2 of 4 SID05N10 Elektronische Bauelemente 5A , 100V , RDS(ON) 170 mΩ N-Channel Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 26-Dec-2011 Rev. A Page 3 of 4 SID05N10 Elektronische Bauelemente 5A , 100V , RDS(ON) 170 mΩ N-Channel Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 26-Dec-2011 Rev. A Page 4 of 4