SID20N06-90I

SID20N06-90I Elektronische Bauelemente 19A, 60V, RDS(ON) 94 m N-Channel Enhancement MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. TO-251P FEATURES     Low RDS(on) provides higher efficiency and extends battery life. Miniature SC-59 surface mount package saves board space. Fast switching speed. High performance trench technology. A B C D GE APPLICATION DC-DC converters, power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. M K F H J P REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 2.20 2.40 0.40 0.60 6.80 7.20 4.00 REF. G H J K M P Millimeter Min. Max. 6.00 6.30 0.90 1.50 2.30 0.60 0.90 0.70 1.20 0.40 0.60 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 1 Symbol VDS VGS TC=25°C ID IDM IS PD TJ, TSTG Rating 60 ±20 19 40 30 50 -55 ~ 175 Unit V V A A A W °C Continuous Source Current (Diode Conduction) Power Dissipation 1 TC=25°C Operating Junction and Storage Temperature Range Thermal Resistance Data Maximum Junction to Ambient Maximum Junction to Case Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. 1 RθJA RθJC 50 3 °C / W http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 07-Apr-2011 Rev. A Page 1 of 4 SID20N06-90I Elektronische Bauelemente 19A, 60V, RDS(ON) 94 m N-Channel Enhancement MOSFET ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 1 Symbol VGS(th) IGSS IDSS ID(ON) RDS(ON) gFS VSD Min Static 1 30 - Typ 22 1.1 2 Max ±100 1 25 94 109 - Unit V nA μA A mΩ S V Test conditions VDS=VGS, ID=250μA VDS=0, VGS=20V VDS=48V, VGS=0 VDS=48V, VGS=0, TJ=55°C VDS=5V, VGS=10V VGS=10V, ID=19A VGS=4.5V, ID=18A VDS=15V,,ID=19A IS=24A, VGS=0 Drain-Source On-Resistance 1 Forward Transconductance Diode Forward Voltage 1 Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Td(ON) Tr Td(OFF) Tf Trr - 3.6 1.8 1.3 16 5 23 3 50 nS nS nC ID=19A VDS=15V VGS=4.5V VDD=25V VGEN=10V RL=25Ω ID=24A IF=24A, Di/Dt=100A/μS Notes: 1 Pulse test：PW ≦ 300 us duty cycle ≦ 2%. 2 Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 07-Apr-2011 Rev. A Page 2 of 4 SID20N06-90I Elektronische Bauelemente 19A, 60V, RDS(ON) 94 m N-Channel Enhancement MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 07-Apr-2011 Rev. A Page 3 of 4 SID20N06-90I Elektronische Bauelemente 19A, 60V, RDS(ON) 94 m N-Channel Enhancement MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 07-Apr-2011 Rev. A Page 4 of 4