SID3055

SID3055 Elektronische Bauelemente 15A, 30V,RDS(ON)80 mΩ N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product TO-251 6.6±0.2 5.3±0.2 2.3±0.1 0.5±0.05 Description The TO-251 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications 5.6±0.2 7.0±0.2 such as DC/DC converters. 7.0±0.2 1.2±0.3 0.75±0.15 0.6±0.1 2.3REF. 0.5±0.1 G D S Dimensions in millimeters D G Marking Code: 3055 XXXX(Date Code) S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V Pulsed Drain Current 1 Symbol VD S VG S ID@TC=25 C ID@TC=100C I DM PD@TC=25 C o o o Ratings 30 ± 20 15 9 50 28 0.22 Unit V V A A A W W/ C o o Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 C Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Symbol Max. Max. Rthj-c Rthj-a Ratings 4.5 62 o o Unit C /W C /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 6 SID3055 Elektronische Bauelemente 15A, 30V,RDS(ON)80 mΩ N-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 C ) Drain-Source Leakage Current(Tj=150C) Static Drain-Source On-Resistance o o o Symbol BVDSS BVDS/ Tj VGS(th) IGSS IDSS Min. 30 _ Typ. _ Max. _ Unit V V/ C V nA uA uA o Test Condition VGS=0V, ID=250uA Reference to 25 C, ID=1mA VDS=VGS, ID=250uA VGS=±20V VDS=30V,VGS=0 VDS=24V,VGS=0 VGS=10V, ID=28A VGS=4.5V, ID=22A o 0.037 _ _ _ _ _ 1.0 _ _ _ _ 3.0 ±100 25 250 16.5 25 _ _ _ RD S ( O N ) Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss 14.5 21.5 5.4 1.3 3.6 3.6 19.8 13 3.2 260 144 13 _ _ _ _ _ _ _ _ _ _ _ mΩ Total Gate Charge2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance nC ID=8 A VDS=24V VGS= 5V _ _ _ _ VDD=15V ID=8A nS VGS=10V RG=3.4Ω RD=1.9 Ω _ _ _ pF VGS=0V VDS=25V f=1.0MHz Source-Drain Diode Parameter Forward On Voltage 2 Continuous Source Current(Body Diode) Pulsed Source Current(Body Diode) 1 Symbol VSD IS Min. _ _ Typ. _ _ _ Max. 1.3 Unit V A A Test Condition IS=15 A, VGS=0V.Tj=25C VD=VG=0V,VS=1.3 V o 15 50 ISM _ Notes: 1.Pulse width limited by safe operating area. 2. Pulse width≦300us, dutycycle≦2%. http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 6 SID3055 Elektronische Bauelemente 15A, 30V,RDS(ON)80mΩ N-Channel Enhancement Mode Power Mos.FET Characteristics Curve http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 6 SID3055 Elektronische Bauelemente 15A, 30V,RDS(ON)80mΩ N-Channel Enhancement Mode Power Mos.FET http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 6 SID3055 Elektronische Bauelemente 15A, 30V,RDS(ON)80mΩ N-Channel Enhancement Mode Power Mos.FET http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 5 of 6 SID3055 Elektronische Bauelemente 15A, 30V,RDS(ON)80mΩ N-Channel Enhancement Mode Power Mos.FET http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 6 of 6