SID6679

SID6679 Elektronische Bauelemente -75A, -30V,RDS(ON)9 mΩ P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The SID6679 provide the designer with the best combination of fast switching, ruggerized device device design, low on-resistance and cost -effectiveness. The TO-251 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. 5.6±0.2 7.0±0.2 6.6±0.2 5.3±0.2 TO-251 2.3±0.1 0.5±0.05 1.2±0.3 Featur es * Low On-Resistance 7.0±0.2 0.75±0.15 * Simple Drive Requirement * Fast Switching Characteristic 0.6±0.1 2.3REF. 0.5±0.1 G D D S Dimensions in millimeters G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V Pulsed Drain Current 1 Symbol VDS VG S ID@TC=25 C ID@TC=100 C I DM PD@TC=25 C o o o Ratings -30 ± 25 -75 -50 -300 89 0.71 Unit V V A A A W W/ C o o Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 C Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Symbol Max. Max. Rthj-c Rthj-a Ratings 1.4 110 o o Unit C /W C /W ttp://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 4 SID6679 Elektronische Bauelemente -75A, -30V,RDS(ON)9mΩ P-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 C ) Drain-Source Leakage Current(Tj=150C) Static Drain-Source On-Resistance 2 o o o Symbol BVDSS BVDS/ Tj VGS(th) IGSS IDSS Min. - 30 _ Typ. _ - 0.03 _ _ _ _ _ _ Max. _ Unit V V/ C V nA uA uA o Test Condition VGS=0V, ID=-2 50uA Reference to 25 C, ID=- 1mA VDS=VGS, ID=- 250uA VGS=±25V VDS=-3 0V,VGS=0 VDS=-2 4V,VGS=0 VGS=-1 0V, ID=- 30A VGS=- 4.5V, ID=- 24A o _ -1.0 _ _ _ _ -3.0 ±100 -1 -25 9 15 67 _ _ RD S ( O N ) Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs _ _ _ _ _ _ _ _ _ _ _ mΩ Total Gate Charge2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance 42 6 25 11 35 58 78 2870 960 740 34 nC ID=-16A VDS=-24V VGS=-4.5V _ _ _ _ VDD=-15V ID=-16A nS VGS=-10 V RG=3.3Ω RD=0. 94Ω 4590 _ _ pF VGS=0V VDS=25V f=1.0MHz _ _ S VDS=-1 0V, ID=-24 A Source-Drain Diode Parameter Forward On Voltage 2 Reverse Recovery Time 2 Reverse Recovery Change Symbol VSD Trr Min. _ _ Typ. _ Max. -1.2 _ _ Unit V nS nC Test Condition IS=- 24A, VGS=0V. IS=-16 A, VGS=0V. dl/dt=100A/us 47 43 Qrr _ Notes: 1.Pulse width limited by Max. junction temperature. 2. Pulse width≦300us, dutycycle≦2%. ttp://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 4 SID6679 Elektronische Bauelemente -75A, -30V,RDS(ON)9mΩ P-Channel Enhancement Mode Power Mos.FET Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature ttp://www.SeCoSGmbH.com/ Fig 5. Forward Characteristics of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 4 SID6679 Elektronische Bauelemente -75A, -30V,RDS(ON)9mΩ P-Channel Enhancement Mode Power Mos.FET Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform ttp://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 4