SID9575

SID9575 Elektronische Bauelemente -15 A, -60 V, RDS(ON) 90 mΩ P-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen-free DESCRIPTION The SID9575 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The through-hole version (TO-251) is available for low-profile applications and suited for low voltage applications such as DC / DC converters. FEATURES Simple Drive Requirement Lower On-resistance Fast Switching Characteristic PACKAGE DIMENSIONS MARKING: 9575 G REF. A B C D E F D S Date Code REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80 Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF 0.60 0.90 ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V 1 Pulsed Drain Current Total Power Dissipation Linear Derating Factor Operating Junction & Storage temperature Symbol VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @ TC = 25°C TJ, TSTG Ratings -60 ±25 -15 -9.5 -45 36 0.29 -55~150 Unit V V A A A W W / °C °C THERMAL DATA Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Symbol RθJC RθJA Value 3.5 110 Unit °C / W °C / W http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 01-June-2004 Rev. A Page 1 of 4 SID9575 Elektronische Bauelemente -15 A, -60 V, RDS(ON) 90 mΩ P-Channel Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Gate Threshold Voltage Forward Trans-conductance Gate-Source Leakage Current Drain-Source Leakage Current (TJ=25℃) Drain-Source Leakage Current (TJ=150℃) Static Drain-Source On-Resistance Total Gate Charge 2 2 Symbol BVDSS ΔBVDSS / ΔTJ VGS(th) gfs IGSS IDSS Min -60 -1.0 - Typ -0.06 14 17 5 6 10 19 46 53 1660 160 100 Max Unit -3.0 ±100 -1 -25 90 120 27 2660 pF nS nC V Test Conditions VGS = 0, ID = -250 uA V / °C Reference to 25°C, ID = -1 mA V S nA uA VDS=VGS, ID= -250 uA VDS = -10V, ID = -9A VGS = ±25V VDS = -60 V, VGS = 0 VDS = -48 V, VGS = 0 VGS = -10 V, ID = -12A VGS = -4.5 V, ID = -9 A ID = - 9 A VDS = -48 V VGS = -4.5 V RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss mΩ Gate-Source Charge Gate-Drain (“Miller”) Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 VDS = -30 V ID = - 9 A VGS = -10 V RG = 3.3 Ω RD = 3.3 Ω VGS = 0 V VDS = -25 V f = 1.0 MHz SOURCE-DRAIN DIODE Parameter Forward On Voltage 2 2 Symbol VSD Trr Qrr Min - Typ 56 159 Max Unit -1.2 V ns nC Test Conditions IS = -9A, VGS = 0 V IS = -9 A, VGS = 0V dl/dt = 100 A / uS Reverse Recovery Time Reverse Recovery Charge Notes: 2. Pulse width≦300us, duty cycle≦2%. 1. Pulse width limited by safe operating area. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 01-June-2004 Rev. A Page 2 of 4 SID9575 Elektronische Bauelemente -15 A, -60 V, RDS(ON) 90 mΩ P-Channel Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 01-June-2004 Rev. A Page 3 of 4 SID9575 Elektronische Bauelemente -15 A, -60 V, RDS(ON) 90 mΩ P-Channel Enhancement Mode Power MOSFET CHARACTERISTIC CURVES (Cont’d) http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 01-June-2004 Rev. A Page 4 of 4