SID9575_11

SID9575 Elektronische Bauelemente -15A , -60V , RDS(ON) 90 mΩ P-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen-free DESCRIPTION The SID9575 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. TO-251 FEATURES Simple Drive Requirement Lower On-resistance Fast Switching Characteristic A B C D APPLICATION The through-hole version (TO-251) is available for low-profile applications and suited for low voltage applications such as DC / DC converters. 2 K GE F H MARKING: 9575 Date code Drain M J P 1 Gate REF. A B C D E F 3 Source Millimeter Min. Max. 6.40 6.80 5.20 5.50 2.20 2.40 0.45 0.55 6.80 7.20 7.20 7.80 REF. G H J K M P Millimeter Min. Max. 5.40 5.80 0.90 1.50 2.30 0.60 0.90 0.50 0.70 0.45 0.60 ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 Symbol VDS VGS Ratings -60 ±25 -15 Unit V V A A A W °C / W °C / W W / °C °C VGS=10V, TC=25°C VGS=10V, TC=100°C ID IDM PD RθJC RθJA -9.5 -45 36 3.5 110 0.29 Total Power Dissipation @ TC = 25°C Thermal Resistance Junction-case Thermal Resistance Junction-ambient Linear Derating Factor Operating Junction & Storage temperature TJ, TSTG -55~150 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 12-May-2011 Rev. B Page 1 of 4 SID9575 Elektronische Bauelemente -15A , -60V , RDS(ON) 90 mΩ P-Channel Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Coefficient Voltage Temperature Symbol BVDSS ∆BVDSS / ∆TJ VGS(th) gfs IGSS IDSS Min -60 -1 - Typ -0.06 14 17 5 6 10 19 46 53 1660 160 100 Max -3 ±100 -1 -25 90 120 27 2660 - Unit V V/° C V S nA uA Test Conditions VGS=0, ID = -250µA Reference to 25° I D = -1mA C, VDS=VGS, ID= -250 µA VDS = -10V, ID = -9A VGS= ±25V VDS= -60 V, VGS=0 VDS= -48 V, VGS=0 VGS= -10 V, ID= -12A VGS= -4.5 V, ID= -9 A ID= -9 A VDS= -48 V VGS= -4.5 V VDS= -30 V ID= -9 A VGS= -10 V RG=3.3 Ω RD=3.3 Ω VGS=0 VDS= -25V f =1 MHz Gate Threshold Voltage Forward Trans-conductance Gate-Source Leakage Current Drain-Source Current Leakage TJ=25℃ TJ=150℃ 2 Static Drain-Source On-Resistance Total Gate Charge 2 RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss m - Gate-Source Charge Gate-Drain (“Miller”) Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 nC nS pF Source-Drain Diode Forward On Voltage 2 2 VSD Trr Qrr - 56 159 -1.2 - V nS nC IS= -9A, VGS=0 IS= -9 A, VGS=0 dl/dt=100A / µs Reverse Recovery Time Reverse Recovery Charge Notes: 1. Pulse width limited by safe operating area. 2. Pulse width≦300us, duty cycle≦2% . http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 12-May-2011 Rev. B Page 2 of 4 SID9575 Elektronische Bauelemente -15A , -60V , RDS(ON) 90 mΩ P-Channel Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 12-May-2011 Rev. B Page 3 of 4 SID9575 Elektronische Bauelemente -15A , -60V , RDS(ON) 90 mΩ P-Channel Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 12-May-2011 Rev. B Page 4 of 4