SID9960

SID9960 Elektronische Bauelemente 42A, 40V,RDS(ON)16 mΩ N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The SID9960 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. 5.6±0.2 6.6±0.2 5.3±0.2 TO-251 2.3±0.1 0.5±0.05 7.0±0.2 1.2±0.3 0.75±0.15 7.0±0.2 Featur es * Low Gate Charge 0.6±0.1 2.3REF. 0.5±0.1 * Simple Drive Requirement * Fast Switching G D S Dimensions in millimeters D G Marking Code: 9960 XXXX(Date Code) S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V Pulsed Drain Current 1 Symbol VD S VG S ID@TC=25 C ID@TC=100C I DM PD@TC=25 C o o o Ratings 40 ± 20 42 26 195 45 0.36 Unit V V A A A W W/ C o o Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 C Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Symbol Max. Max. Rthj-c Rthj-a Ratings 2.8 110 o o Unit C /W C /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 4 SID9960 Elektronische Bauelemente 42A, 40V,RDS(ON)16 mΩ N-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 C ) Drain-Source Leakage Current(Tj=150C) Static Drain-Source On-Resistance o o o Symbol BVDSS BVDS/ Tj VGS(th) IGSS IDSS Min. 40 _ Typ. _ Max. _ Unit V V/ C V nA uA uA o Test Condition VGS=0V, ID=250uA Reference to 25 C, ID=1mA VDS=VGS, ID=250uA VGS=±20V VDS=40V,VGS=0 VDS=32V,VGS=0 VGS=10V, ID=20A VGS=4.5V, ID=1 8A o 0.032 _ _ _ _ _ _ _ 1.0 _ _ _ _ 3.0 ±100 1 25 16 25 _ _ _ RD S ( O N ) Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs _ _ _ _ _ _ _ _ _ _ _ mΩ Total Gate Charge2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance 18 6 12 9 110 23 10 1500 250 180 30 nC ID=20A VDS=20V VGS= 4.5V _ _ _ _ _ _ _ VDD=20V ID=20A nS VGS=10V RG=3.3Ω RD=1 Ω pF VGS=0V VDS=25V f=1.0MHz _ _ S VDS=10V, ID=20A Source-Drain Diode Parameter Forward On Voltage 2 Reverse Recovery Time Reverse Recovery Change Symbol VSD Trr Min. _ _ Typ. _ Max. 1.3 _ _ Unit V nS nC Test Condition IS=45 A, VGS=0V. IS=20 A, VGS=0V. dl/dt=100A/us 22 27.4 Q rr _ Notes: 1.Pulse width limited by safe operating area. 2. Pulse width≦300us, dutycycle≦2%. http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 4 SID9960 Elektronische Bauelemente 42A, 40V,RDS(ON)16 mΩ N-Channel Enhancement Mode Power Mos.FET Characteristics Curve http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 4 SID9960 Elektronische Bauelemente 42A, 40V,RDS(ON)16 mΩ N-Channel Enhancement Mode Power Mos.FET http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 4