SJV01N60

SJV01N60 Elektronische Bauelemente 1A , 600V , RDS(ON) 10 mΩ N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes . The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power suppliers, converters and PWM motor controls ,these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. A TO-92 D B E C F G H J 1 Gate 2 Drain 3 Source FEATURES Robust High Voltage Termination Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature REF. A B C D E Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 REF. F G H J K Millimeter Min. Max. 0.30 0.51 1.27 TYP. 1.10 1.40 2.42 2.66 0.36 0.76 D 2 1 G 3 S ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Single Pulsed Avalanche Energy 1 Symbol VDS VGS ID IDM PD EAS RθJA TJ, TSTG Rating 600 ±30 1 9 0.625 20 200 150, -50~150 Unit V V A A W mJ ° /W C ° C Thermal Resistance Junction-Ambient(Max). Operating Junction & Storage Temperature Notes: 1. EAS condition: Tj=25° V DD=100V, VGS=10V, L=10mH, IAS=2A, RG=25 . C, http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 13-Sep-2011 Rev. A Page 1 of 2 SJV01N60 Elektronische Bauelemente 1A , 600V , RDS(ON) 10 mΩ N-Channel Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage 1 1 Symbol BVDSS VGS(th) IGSS IDSS 1 Min. Typ. 600 2 0.5 8 21 18 24 210 28 4.2 - Max. 4 ±100 0.1 10 - Unit V V nA µA Teat Conditions VGS=0, ID=250µA VDS=VGS, ID=250µA VDS=0, VGS= ±20V VDS=600V, VGS=0 VGS=10V, ID=0.6A Gate-Source Leakage Current Drain-Source Leakage Current Static Drain-Source On-Resistance Forward Transconductance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward On Voltage 1 1 RDS(ON) gFS Td(on) Tr Td(off) Tf Ciss Coss Crss VSD S VDS=50V, ID=0.5A VDD=300V ID=1A VGS=10V RG=18 nS 1.5 V pF VGS=0 VDS=25V f=1.0 MHz IS=1A, VGS=0 Notes: 1. Pulse Test : Pulse width≦300µs, duty cycle≦2%. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 13-Sep-2011 Rev. A Page 2 of 2