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SM230MH

SM230MH

  • 厂商:

    SECOS

  • 封装:

  • 描述:

    SM230MH - 2.0 Amp Surface Mount Schottky Barrier Rectifiers - SeCoS Halbleitertechnologie GmbH

  • 数据手册
  • 价格&库存
SM230MH 数据手册
SM220MH~SM2100MH Elektronische Bauelemente 20 ~ 100 V 2.0 Amp Surface Mount Schottky Barrier Rectifiers RoHS Compliant Product A suffix of “-C” specifies halogen-free and RoHS Compliant FEATURES Batch process design, excellent power dissipation offers. better reverse leakage current and thermal resistance. Low profile surface mounted application. in order to optimize board space. Low power loss and low forward voltage drop High surge, high current capability, and high efficiency. Fast switching for high efficiency. Guard-ring for overvoltage protection. Ultra high-speed switching Silicon epitaxial planar chip, metal silicon junction. SOD-123MH A B F D C PACKAGING INFORMATION Small plastic SMD package. Case: Molded plastic Epoxy: UL94-V0 rate flame retardant Weight: 0.0110 g (Approximately) REF. A B C Millimeter Min. Max. 3.30 3.70 1.40 1.80 0.60 1.00 E E REF. D E F 1 Cathode 2 Anode Millimeter Min. Max. 3.10 (MAX.) 0.80 (TYP.) 0.30 (TYP.) MARKING CODE Part Number SM220MH SM230MH SM240MH SM250MH Marking Code 22 23 24 25 Part Number SM260MH SM280MH SM2100MH Marking Code 26 28 20 MAXIMUM RATINGS (Ta = 25°C unless otherwise specified.) PART NUMBERS PARAMETERS Recurrent Peak Reverse Voltage (Max.) RMS Voltage (Max.) Reverse Voltage (Max.) Forward Voltage (Max.) Forward Rectified Current (Max.) Peak Forward Surge Current SYMBOL SM 220 MH SM 230 MH SM 240 MH SM 250 MH SM 260 MH SM 280 MH SM 2100 MH UNITS TESTING CONDITIONS VRRM VRMS VR VF IO 20 14 20 30 21 30 0.50 40 28 40 50 35 50 0.70 2.0 60 42 60 80 56 80 100 70 100 0.85 V V V V A See Fig.1 8.3ms single half sine-wave superimposed on rated load (JEDEC method) IFSM 40 0.5 10 85 160 -65 ~ 175, -55 to 125 -65 ~ 175, -55 to 150 A Reverse Current (Max.) Thermal Resistance (Typ.) Diode Junction Capacitance (Typ.) Storage and Operating Temperature Range IR RθJA CJ TSTG, TJ mA °C/W pF °C VR=VRRM, Ta=25°C VR=VRRM, Ta=125°C Junction to ambient f=1MHz and applied 4V DC reverse voltage 01-December-2008 Rev. A Page 1 of 2 SM220MH~SM2100MH Elektronische Bauelemente 20 ~ 100 V 2.0 Amp Surface Mount Schottky Barrier Rectifiers RATINGS AND CHARACTERISTIC CURVES FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT,(A) FIG.2-TYPICAL FORWARD CHARACTERISTICS 2.4 2.0 50 INSTANTANEOUS FORWARD CURRENT,(A) MH 010 M2 ~S MH 025 MH 0SM 24 SM MH ~S M2 40 M -M H~ H SM 26 0M H 1.6 1.2 0.8 0.4 0 0 20 40 60 80 100 0- SM 22 0- 25 SM AMBIENT TEMPERATURE,( C) FIG.3-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 50 ~ MH 022 SM 10 3.0 1.0 28 SM 0- M H~ 21 SM 00 -M H 120 140 160 180 200 TJ=25 C Pulse Width 300us 1% Duty Cycle 0.1 PEAK FORWARD SURGE CURRENT,(A) 40 .01 .1 .3 .5 .7 .9 1.1 1.3 1.5 30 TJ=25 C 8.3ms Single Half Sine Wave JEDEC method FORWARD VOLT AGE,(V) 20 10 FIG.5 - TYPICAL REVERSE 0 1 5 10 50 100 CHARACTERISTICS 100 NUMBER OF CYCLES AT 60Hz FIG.4-TYPICAL JUNCTION CAPACITANCE 700 600 500 400 300 200 100 0 JUNCTION CAPACITANCE,(pF) REVERSE LEAKAGE CURRENT, (mA) 10 1.0 TJ=75 C .1 TJ=25 C .01 .05 .1 .5 1 5 10 50 100 .01 0 20 40 60 80 100 120 140 REVERSE VOLTAGE,(V) PERCENT OF RATED PEAK REVERSE VOLTAGE,(%) 01-December-2008 Rev. A Page 2 of 2
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