SMBT772SS

Elektronische Bauelemente -3 A, -40 V PNP Epitaxial Planar Transistor SMBT772SS RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SMBT772SS is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES High current output up to -3 A Low saturation voltage PACKAGE DIMENSIONS A L S 1 3 Top View 3 1 2 SC-59 Dim A B C D G H C H K J B 2 Min 2.70 1.30 1.00 0.35 0.00 0.10 0.20 0.85 2.25 Max 3.10 1.70 1.30 0.50 0.10 0.26 0.60 1.15 3.00 D G 1.90 REF. J K L S All Dimension in mm ABSOLUTE MAXIMUM RATINGS at Ta = 25°C Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction, Storage Temperature Symbol VCBO VCEO VEBO IC Pd TJ, TSTG Ratings -40 -30 -5 -3 750 +150, -55 ~ +150 Unit V V V A mW ℃ CHARACTERISTICS at Ta = 25°C Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 fT Cob Min. -40 -30 -5 30 100 - Typ. -1.0 80 55 Max. -1 -1 -0.5 -2.0 500 - Unit V V V uA uA V V Test Conditions IC=-100uA, IE = 0 IC=-1mA, IB = 0 IE=-10uA, IC = 0 VCB=-30V, IE = 0 VEB=-3V, IC = 0 IC=-2A, IB=-200mA IC=-2A, IB=-200mA VCE=-2V, IC=-20mA VCE=-2V, IC=-1A VCE=-5V, IC=-100mA, f=100MHz VCB=-10V, f=-1MHz * Pulse Test: Pulse Width≦380us, Duty Cycle≦2% MHz pF CLASSIFICATION OF hFE2 Rank Range Q 100 - 200 P 160 - 320 E 200 - 500 01-June-2002 Rev. A Page 1 of 3 Elektronische Bauelemente -3 A, -40 V PNP Epitaxial Planar Transistor SMBT772SS CHARACTERISTICS CURVE 01-June-2002 Rev. A Page 2 of 3 Elektronische Bauelemente -3 A, -40 V PNP Epitaxial Planar Transistor SMBT772SS CHARACTERISTICS CURVE (cont’d) 01-June-2002 Rev. A Page 3 of 3