SMBT882SS

SMBT882SS Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free NPN Silicon Epitaxial Planar Transistor DESCRIPTION The SMBT882SS is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES High current output up to 3A Low saturation voltage PACKAGE DIMENSIONS A L S 3 Top View SC-59 Dim A Min 2.70 1.30 1.00 0.35 Max 3.10 1.70 1.30 0.50 2 1 B B C D D G C H COLLECTOR BASE EMITTER G H J K 1.90 REF. 0.00 0.10 0.20 1.25 2.25 0.10 0.26 0.60 1.65 3.00 J K L S All Dimension in mm ABSOLUTE MAXIMUM RATINGS at Ta = 25°C Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction, Storage Temperature Symbol VCBO VCEO VEBO IC Pd TJ, TSTG Ratings 40 30 5.0 3.0 750 +150, -55 ~ +150 Unit V V V A mW ℃ CHARACTERISTICS at Ta = 25°C Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 fT Cob Min. 40 30 5.0 30 100 - Typ. 90 45 Max. 1.0 1.0 0.5 2.0 500 - Unit V V V μA μA V V Test Conditions IC=100uA, IE = 0 IC=1mA, IB=0 IE=10uA, IC=0 VCB=30V, IE= 0 VEB=3V, IC= 0 IC=2A, IB=200mA IC=2A, IB=200mA VCE=2V, IC=20mA VCE=2V, IC=1 A VCE=5V, IC=100mA, f=100MHz VCB=10V, f=1MHz MHz pF * Pulse Test: Pulse Width≦380μs, Duty Cycle≦2% CLASSIFICATION OF hFE2 Rank Range 01-June-2002 Rev. A Q 100 - 200 P 160 - 320 E 200 - 500 Page 1 of 3 SMBT882SS Elektronische Bauelemente NPN Silicon Epitaxial Planar Transistor CHARACTERISTICS CURVE 01-June-2002 Rev. A Page 2 of 3 SMBT882SS Elektronische Bauelemente NPN Silicon Epitaxial Planar Transistor CHARACTERISTICS CURVE (cont’d) 01-June-2002 Rev. A Page 3 of 3