SMG2302N

SMG2302N Elektronische Bauelemente 3.4 A, 20 V, RDS(ON) 76 m N-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are A 3 SC-59 L 3 Top View CB 1 2 2 FEATURES  1    Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper lead frame SC-59 saves board space. Fast switching speed. High performance trench technology. K E D F G H J Application DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 REF. G H J K L Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 PACKAGE INFORMATION Package SC-59 MPQ 3K LeaderSize 7’ inch    ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) Power Dissipation 1 Operating Junction and Storage Temperature Range 1 Symbol VDS VGS ID @ TA=25°C ID @ TA=70°C ID IDM IS PD @ TA=25°C PD @ TA=70°C PD Tj, Tstg Ratings 20 ±8 3.4 2.2 10 1.6 1.25 0.8 -55 ~ 150 Unit V V A A A A W W °C Thermal Resistance Ratings Maximum Junction to Ambient 1 Notes: 1 Surface Mounted on 1” x 1” FR4 Board. 2 Pulse width limited by maximum junction temperature. t ≦ 5 sec Steady State RJA 100 166 °C / W http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 11-Feb-2011 Rev. A Page 1 of 4 SMG2302N Elektronische Bauelemente 3.4 A, 20 V, RDS(ON) 76 m N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 1 Symbol VGS(th) IGSS IDSS ID(on) RDS(ON) gfs VSD Min. 0.7 7 - Typ. 0.8 7 0.7 2 Max. 1.2 100 1 10 76 103 - Unit V nA μA A mΩ S V Test Conditions VDS=VGS, ID=250μA VDS=0, VGS=8V VDS=16V, VGS=0 VDS=20V, VGS= 0, TJ= 55°C VDS=5V, VGS=4.5V VGS=4.5V, ID=3.4A VGS=2.5V, ID=2.9A VDS=5V, ID=1.5A IS=1.6A, VGS=0 Drain-Source On-Resistance 1 Forward Transconductance Diode Forward Voltage 1 Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Qg Qgs Qgd Ciss Coss Crss Td(on) Tr Td(off) Tf - 3.5 0.55 0.95 815 175 106 5 8 11 3 nS VDD=10V, VGEN=4.5V, RL=6, RG=6 pF VDS=15V, VGS=0, f=1MHz nC VDS=10V, VGS=4.5V, ID=3.4A Notes: 1 Pulse test：PW ≦ 300 us duty cycle ≦ 2%. 2 Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 11-Feb-2011 Rev. A Page 2 of 4 SMG2302N Elektronische Bauelemente 3.4 A, 20 V, RDS(ON) 76 m N-Channel Enhancement Mode MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 11-Feb-2011 Rev. A Page 3 of 4 SMG2302N Elektronische Bauelemente 3.4 A, 20 V, RDS(ON) 76 m N-Channel Enhancement Mode MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 11-Feb-2011 Rev. A Page 4 of 4