SMG2303

SMG2303 -1.9A, -30V,RDS(ON) 240mΩ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A SC-59 Dim A Min 2.70 1.40 1.00 0.35 1.70 0.00 0.10 0.20 0.85 2.40 Max 3.10 1.60 1.30 0.50 2.10 0.10 0.26 0.60 1.15 2.80 Description The SMG2303 provide the designer with the best combination of fast switching, low on-resistance S 2 L 3 Top View B 1 B C D and cost-effectiveness. D G G H C J K Features * Super high dense cell design for extremely low RDS(ON) * Reliable and rugged H Drain Gate Source J K L S Applications * Power Management in Notebook Computer * Protable Equipment * Battery Powered System D All Dimension in mm G Marking : 2303 S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg 3 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings -30 ±12 -1.9 -1.5 -10 1.38 0.01 -55~+150 Unit V V A A A W W/ C o o 3 C Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Rthj-a Ratings 90 o Unit C /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 4 SMG2303 Elektronische Bauelemente -1.9A, -30V,RDS(ON) 240mΩ P-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gat Thershold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70oC) StaticDrain-Source On-Resistance 2 o o Symbol BVDSS BVDS/ Tj VGS(th) IGSS IDSS Min. -30 _ Typ. _ Max. _ _ Unit V V/ C V nA uA uA o Test Condition VGS=0V, ID=-250uA Reference to 25 C,ID=-1mA VDS=VGS, ID=-250uA VGS=± 12V VDS=-30V,VGS=0 VDS=-30V,VGS=0 VGS=-10V, ID=-1.7A VGS=-4.5V, ID=-1.3A o -0.1 _ _ _ _ _ _ -1.0 _ _ _ _ _ ±100 -1 -10 240 460 _ _ _ RDS(ON) Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs _ _ _ _ _ _ _ _ _ _ _ mΩ Total Gate Charge 2 6.2 1.4 0.3 7.6 8.2 17.5 9 230 130.4 40 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time 2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance nC ID=-1.7A VDS=-15V VGS=-10V _ _ _ _ VDS=-15V ID=-1A nS VGS=-10V RG=6Ω RD=15Ω _ _ _ pF VGS=0V VDS=-15V f=1.0MHz _ _ S VDS=-10V, ID=-1.7A Source-Drain Diode Parameter Forward On Voltage 2 Symbol VSD Is ISM Min. _ _ Typ. _ _ Max. -1.2 -1 Unit V Test Condition IS=-1.25A, VGS=0V. VD=VG=0V, VS=-1.2V G Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) A _ _ -10 A Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width≦300us, dutycycle≦2%. 3.Surface mounted on 1 inch2 copper pad of FR4 board; 270°C/W when mounted on min. copper pad. http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 4 SMG2303 Elektronische Bauelemente Ω -1.9A, -30V,RDS(ON) 240m P-Channel Enhancement Mode Power Mos.FET Characteristics Curve http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 4 SMG2303 Elektronische Bauelemente -1.9A, -30V,RDS(ON) 240mΩ P-Channel Enhancement Mode Power Mos.FET http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 4