SMG2305PE

SMG2305PE Elektronische Bauelemente -4.5 A, -20 V, RDS(ON) 43 m P-Channel Enhancement MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. A 3 SC-59 L 3 Top View 1 2 CB 1 2 K E D FEATURES     Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SC-59 saves board space. Fast switching speed. High performance trench technology. F G REF. A B C D E F H Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 J Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 REF. G H J K L PACKAGE INFORMATION Package SC-59 MPQ 3K LeaderSize 7’ inch ESD Protection Diode 2KV MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 TA=25°C Power Dissipation TA=70°C Operating Junction and Storage Temperature Range 1 Symbol VDS VGS TA=25°C TA=70°C ID IDM PD TJ, TSTG Rating -20 ±8 -4.5 -3.6 -10 1.25 0.8 -55 ~ 150 100 150 Unit V V A A W °C Thermal Resistance Data Maximum Junction to Ambient 1 t ≦ 5 sec Steady-State RθJA °C/W Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 14-Jan-2011 Rev. B Page 1 of 4 SMG2305PE Elektronische Bauelemente -4.5 A, -20 V, RDS(ON) 43 m P-Channel Enhancement MOSFET ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 1 Typ Max Unit Test Conditions VGS(th) IGSS IDSS ID(ON) -0.7 -10 - 12 -0.60 2 ±100 -1 -10 43 54 120 - V nA μA A VDS = VGS, ID = -250μA VDS = 0V, VGS= ±8V VDS = -16V, VGS= 0V VDS = -16V, VGS= 0V, TJ=55°C VDS = -5V, VGS= -4.5V VGS= -4.5V, ID = -3.6A Drain-Source On-Resistance 1 RDS(ON) - mΩ VGS= -2.5V, ID = -3.1A VGS= -1.8V, ID = -2.7A Forward Transconductance 1 Diode Forward Voltage gFS VSD - S V VDS= -5V,,ID = -1.25A IS= -0.46A, VGS= 0V Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qg Qgs Qgd Td(ON) Tr Td(OFF) Tf - 12.0 2.0 2.0 6.5 20 31 21 nS nC ID= -2.4A VDS= -5V VGS= -4.5V IL= -1A, VDD= -10V VGEN= -4.5V RG= 6Ω Notes: 1. Pulse test：PW ≦ 300 us duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 14-Jan-2011 Rev. B Page 2 of 4 SMG2305PE Elektronische Bauelemente -4.5 A, -20 V, RDS(ON) 43 m P-Channel Enhancement MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 14-Jan-2011 Rev. B Page 3 of 4 SMG2305PE Elektronische Bauelemente -4.5 A, -20 V, RDS(ON) 43 m P-Channel Enhancement MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 14-Jan-2011 Rev. B Page 4 of 4