SMG2305P_1108

SMG2305P Elektronische Bauelemente -4.5A , -20V , RDS(ON) 43 mΩ P-Channel Enhancement MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. A L 3 SC-59 3 Top View CB 1 2 2 FEATURES Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SC-59 saves board space. Fast switching speed. High performance trench technology. 1 K E D F G Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 H Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 J REF. A B C D E F REF. G H J K L APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. PACKAGE INFORMATION Package SC-59 MPQ 3K Leader Size 7 inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation 1 2 1 Symbol VDS VGS TA=25° C ID TA=70° C IDM TA=25° C PD TA=70° C Rating -20 ±8 -4.5 Unit V V A -3.6 -10 1.25 W 0.8 TJ, TSTG -55~150 ° C A Operating Junction and Storage Temperature Range Thermal Resistance Data Maximum Junction to Ambient 1 t ≦ 5 sec Steady-State RθJA 100 150 ° /W C Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 8-Aug-2011 Rev. A Page 1 of 2 SMG2305P Elektronische Bauelemente -4.5A , -20V , RDS(ON) 43 mΩ P-Channel Enhancement MOSFET ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 1 Typ Max Unit Test Condition VGS(th) IGSS IDSS -0.7 - 12 -0.6 2 ±100 -1 V nA µA VDS=VGS, ID= -250µA VDS=0, VGS= ±8V VDS= -16V, VGS=0 VDS= -16V, VGS=0, TJ=55° C -10 43 54 120 S V m A ID(ON) -10 - VDS= -5V, VGS= -4.5V VGS= -4.5V, ID= -3.6A VGS= -2.5V, ID= -3.1A VGS= -1.8V, ID= -2.7A VDS= -5V,,ID= -1.25A IS= -0.46A, VGS=0 Drain-Source On-Resistance 1 RDS(ON) - Forward Transconductance Diode Forward Voltage 1 gFS VSD - Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qg Qgs Qgd Td(ON) Tr Td(OFF) Tf - 12 2 2 6.5 20 31 21 nS nC ID= -2.4A VDS= -5V VGS= -4.5V IL= -1A, VDD= -10V, VGEN= -4.5V, RG=6 Notes: 1. Pulse test：PW ≦ 300 us duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 8-Aug-2011 Rev. A Page 2 of 2