SMG2306NE

SMG2306NE Elektronische Bauelemente 3.5A , 30V , RDS(ON) 58 m N-Channel Enhancement Mode Mos.FET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. K A 3 SC-59 L 3 Top View 1 2 CB 1 2 E D FEATURES     Low RDS(on) provides higher efficiency and extends battery life. Low gate charge Fast switching Miniature SC-59 surface mount package saves board space. F G H J REF. A B C D E F APPLICATION PWMDC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 REF. G H J K L Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 PACKAGE INFORMATION Package SC-59 MPQ 3K Leader Size 7’ inch ESD Protection Diode 2KV ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) Power Dissipation 1 Operating Junction and Storage Temperature Range 1 Symbol VDS VGS ID @ TA=25°C ID @ TA=70°C Ratings 30 ±20 3.5 2.8 16 1.25 1.3 0.8 -55 ~ 150 100 166 Unit V V A A A A W W °C ID IDM IS PD @ TA=25°C PD @ TA=70°C PD Tj, Tstg Thermal Resistance Ratings Maximum Junction to Ambient 1 Notes: 1 Surface Mounted on 1” x 1” FR4 Board. 2 Pulse width limited by maximum junction temperature. t ≦ 10 sec Steady State RJA °C / W http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 12-Apr-2011 Rev. B Page 1 of 4 SMG2306NE Elektronische Bauelemente 3.5A , 30V , RDS(ON) 58 m N-Channel Enhancement Mode Mos.FET ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 1 Symbol VGS(th) IGSS IDSS ID(on) RDS(ON) gfs VSD Min. 1.0 6 - Typ. 6.9 0.8 Max. ±100 1 25 58 82 - Unit V nA μA A mΩ S V Test Conditions VDS=VGS, ID=250μA VDS=0, VGS=20V VDS=24V, VGS=0 VDS=24V, VGS=0, TJ= 55°C VDS =5V, VGS=10V VGS=10V, ID=3.5A VGS=4.5V, ID=3A VDS=15V, ID=3.5A IS=2.3A, VGS= 0 Static Drain-Source On-Resistance 1 Forward Transconductance Diode Forward Voltage 1 DYNAMIC 2 Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Qg Qgs Qgd Td(on) Tr Td(off) Tf 2.2 0.5 0.8 16 5 23 3 nS VDD=25V, VGEN=10V, RL=25Ω, ID=1A nC VDS=15V, VGS=4.5V, ID=3.5A Notes: 1 Pulse test：PW ≦ 300 us duty cycle ≦ 2%. 2 Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 12-Apr-2011 Rev. B Page 2 of 4 SMG2306NE Elektronische Bauelemente 3.5A , 30V , RDS(ON) 58 m N-Channel Enhancement Mode Mos.FET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 12-Apr-2011 Rev. B Page 3 of 4 SMG2306NE Elektronische Bauelemente 3.5A , 30V , RDS(ON) 58 m N-Channel Enhancement Mode Mos.FET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 12-Apr-2011 Rev. B Page 4 of 4