SMG2309

SMG2309 -3.7A, -30V,RDS(ON) 75mΩ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description L A SC-59 Dim A Min 2.70 1.40 1.00 0.35 1.70 0.00 0.10 0.20 0.85 2.40 Max 3.10 1.60 1.30 0.50 2.10 0.10 0.26 0.60 1.15 2.80 The SMG2309 provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The SMG2309 is universally preferred for all commercial industrial surface mount application and suited for low voltage applications such as DC/DC converters. S 2 3 Top View B 1 B C D D G C H Drain Gate G H J K Features * Simple drive requirement * Small package outline J K L S Applications * Power Management in Notebook Computer * Protable Equipment * Battery Powered System Source D All Dimension in mm G Marking : 2309 S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg 3 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings -30 ±20 -3.7 -3.0 -12 1.38 0.01 -55~+150 Unit V V A A A W W/ C o o 3 C Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Rthj-a Ratings 90 o Unit C /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 4 SMG2309 Elektronische Bauelemente -3.7A, -30V,RDS(ON) 75mΩ P-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 oC Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 oC) Drain-Source Leakage Current (Tj=70 oC) Static Drain-Source On-Resistance 2 2 Symbol BVDSS BVDS/ Tj VGS(th) IGSS IDSS Min. -30 _ Typ. _ Max. _ _ Unit V V/ oC V nA uA uA Test Condition VGS=0V, ID=-250uA Reference to 25 oC,ID=-1mA VDS=VGS, ID=-250uA VGS=± 20V VDS=-30V,VGS=0 VDS=-24V,VGS=0 VGS=-10V, ID=-3A VGS=-4.5V, ID=-2.6A -0.02 _ _ _ _ _ _ -1.0 _ _ _ _ -3.0 ±100 -1 -25 75 120 8 _ _ RDS(ON) Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs _ _ _ _ _ _ _ _ _ _ _ mΩ Total Gate Charge 5 1 3 8 5 20 7 412 91 62 5.0 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance 2 nC ID=-3A VDS=-24V VGS=-4.5V _ _ _ _ VDS=-15V ID=-1A nS VGS=-10V RG=3.3Ω RD=15Ω 660 _ _ pF VGS=0V VDS=-25V f=1.0MHz _ _ S VDS=-10V, ID=-3A Source-Drain Diode Parameter Forward On Voltage 2 Symbol VSD Min. _ _ Typ. _ Max. -1.2 _ Unit V Test Condition IS=-1.2A, VGS=0V. Is=3.0A, VGS=0 dl/dt=100A/uS Reverse Recovery Time 2 Trr Qrr 20 nS Reverse Recovery Charge _ 15 _ nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width≦300us, dutycycle≦2%. 3.Surface mounted on 1 inch2 copper pad of FR4 board; 270°C/W when mounted on min. copper pad. http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 4 SMG2309 -3.7A, -30V,RDS(ON) 75mΩ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode http://www.SeCoSGmbH.com/ Fig 6. Gate Threshold Voltage v.s. Junction Temperature Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 4 SMG2309 Elektronische Bauelemente -3.7A, -30V,RDS(ON) 75m Ω P-Channel Enhancement Mode Power Mos.FET Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform http://www.SeCoSGmbH.com/ Fig 12. Gate Charge Waveform Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 4