SMG2310N

SMG2310N Elektronische Bauelemente 2.2A, 30V, RDS(ON) 65 m N-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are lower voltage application, power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. A 3 SC-59 L 3 Top View 1 2 CB 1 2 K E D FEATURES  F G H J   Low RDS(on) provides higher efficiency and extends battery life. Low gate charge Fast switch REF. A B C D E F PACKAGE INFORMATION Package SC-59 MPQ 3K LeaderSize 7’ inch Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 REF. G H J K L Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) Power Dissipation 1 Operating Junction and Storage Temperature Range 1 Symbol VDS VGS ID @ TA=25°C ID @ TA=70°C ID IDM IS PD @ TA=25°C PD @ TA=70°C PD Tj, Tstg Rating 30 ±8 2.2 1.7 10 0.45 0.5 0.42 -55 ~ 150 Unit V V A A A A W W °C Thermal Resistance Ratings Maximum Junction to Ambient 1 Notes: 1 2 t ≦ 5 sec Steady State RJA 250 285 °C / W Surface Mounted on 1” x 1” FR4 Board. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 11-Feb-2011 Rev. A Page 1 of 4 SMG2310N Elektronische Bauelemente 2.2A, 30V, RDS(ON) 65 m N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Symbol V(BR)DSS IGSS IDSS Min. 30 0.43 10 Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time 1 1 Typ. 0.7 54 80 70 13 0.65 2 Max. ±100 1 10 1 65 99 82 1.2 9 11 19 30 10 Unit Test Conditions VGS=0, ID=250μA Switch Off Characteristics nA μA VDS=0, VGS= ±8V VDS=24V, VGS=0 VDS=24V, VGS=0, TJ=55°C VDS=VGS, ID=250μA VDS=5V, VGS=4.5V VGS=4.5V, ID=2.2A mΩ S V VGS=4.5V, ID=2.2A, TJ=55°C VGS=2.5V, ID=2A VDS=5V, ID=2.2A IS=0.45A, VGS=0 Switch On Characteristics Gate-Threshold Voltage On-State Drain Current 1 VGS(th) ID(on) RDS(ON) gfs VSD Qg Qgs Qgd Td(on) Tr Td(off) Tf V A - Dynamic 7 1.1 1.9 4 11 18 5 nC VDS=10V, VGS=4.5V, ID= 2.2A Switching nS VDS=10V, VGEN=4.5V, RG=6, ID=1A Notes: 1 Pulse test：PW ≦ 300 us duty cycle ≦ 2%. 2 Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 11-Feb-2011 Rev. A Page 2 of 4 SMG2310N Elektronische Bauelemente 2.2A, 30V, RDS(ON) 65 m N-Channel Enhancement Mode MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 11-Feb-2011 Rev. A Page 3 of 4 SMG2310N Elektronische Bauelemente 2.2A, 30V, RDS(ON) 65 m N-Channel Enhancement Mode MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 11-Feb-2011 Rev. A Page 4 of 4