SMG2313

SMG2313 Elektronische Bauelemente -2.5A, -20V,RDS(ON) 160mΩ P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description L A SC-59 Dim A B C D G C J K Drain Min 2.70 1.40 1.00 0.35 1.70 0.00 0.10 0.20 0.85 2.40 Max 3.10 1.60 1.30 0.50 2.10 0.10 0.26 0.60 1.15 2.80 The SMG2313 provide the designer with the best combination of fast switching,low on-resistance and cost-effectiveness. The SMG231 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage application such as DC/DC conerters. S 2 3 Top View 1 B D G H J K L S Features * Small Package Outline * Simple Drive Requirement H Gate Source D All Dimension in mm Marking: 2313 G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage 3 Continuous Drain Current 3 Continuous Drain Current Pulsed Drain Current1 Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 : ID @TA=70 : IDM PD @TA=25 : Tj, Tstg Ratings -20 f12 -2.5 -1.97 10 1.38 0.01 -55 ~ +150 Unit V V A A A W W/ Thermal Data Parameter Thermal Resistance Junction-ambient3 Max. Symbol Rthj-a Ratings 90 Unit /W http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 4 SMG2313 Elektronische Bauelemente -2.5A,-20V,RDS(ON) 160mΩ P-Channel Enhancement Mode Power Mos.FET Unless otherwise specified) Min. -20 Typ. -0.01 4.0 5 1 2 6 17 16 5 270 70 55 Max. -1.2 D00 1 -1 -25 120 160 300 8 430 pF ns nC mŁ Unit V V/ : V S nA uA uA Test Conditions VGS=0, ID=-250uA Ref erence to 25 : , ID=-1mA VDS=VGS, ID=-250uA VDS=-5V, ID=-2A VGS= D2V 1 VDS=-20V, VGS=0 VDS=-16V, VGS=0 VGS=-10V, ID=-2.8A VGS=-4.5V, ID=-2.5A VGS=-2.5V, ID=-2A ID=-2A VDS=-16V VGS=-4.5V VDS=-10V ID=-1A VGS=-10V RG=3.3 Ł RD=10 Ł VGS=0V VDS=-20V f=1.0MHz Electrical Characteristics(Tj = 25 Parameter Drain-Source Breakdown Voltage Br eakdown Voltage Temper atur e C oefficient Symbol BVDSS BVDSS / Tj Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 : ) Drain-Source Leakage Current(Tj=70 : ) VGS(th) gfs IGSS IDSS Static Drain-Source On-Resistance 2 RDS(ON) - Total Gate Charge2 Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Rev erse Transf er Capacitance Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss - Source-Drain Diode Parameter Forward On Voltage2 Rev erse Recov ery Time2 Rev erse Recov ery Charge Symbol VSD T rr Q rr Min. Typ. 20 15 Max. -1.2 Unit V ns nC Test Conditions IS=-1.2A, VGS=0V IS=-2A, VGS=0V dI/dt=100A/ s Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surf ace mounted on 1 in2 copper pad of FR4 board, t copper pad. Any changing of specification will not be informed individual 10sec; 270 : /W when mounted on Min. http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Page 2 of 4 SMG2313 Elektronische Bauelemente -2.5A,-20V,RDS(ON) 160mΩ P-Channel Enhancement Mode Power Mos.FET Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode http://www.SeCoSGmbH.com Fig 6. Gate Threshold Voltage v.s. Junction Temperature Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3of 4 SMG2313 Elektronische Bauelemente -2.5A,-20V,RDS(ON) 160mΩ P-Channel Enhancement Mode Power Mos.FET Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 4