SMG2314N

SMG2314N Elektronische Bauelemente 4A , 20V, RDS(ON) 32 m N-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are power switch, power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. A 3 SC-59 L 3 Top View 1 2 CB 1 2 K E D FEATURES  F G H J    Low RDS(on) provides higher efficiency and extends battery life. Low gate charge Fast switch Miniature SC-59 surface mount package saves board space. REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 REF. G H J K L Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 PACKAGE INFORMATION Package SC-59 MPQ 3K LeaderSize 7’ inch ABSOLUTE MAXIMUM RATINGS(TA=25°C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 Power Dissipation 1 Operating Junction and Storage Temperature Range t ≦ 5 sec Steady State PD @ TA=25°C PD @ TA=70°C ID @ TA=25°C ID @ TA=70°C Symbol VDS VGS ID IDM IS PD Tj, Tstg Ratings 20 ±12 4.0 3.1 ±20 1.6 1.3 0.8 -55 ~ 150 100 166 Unit V V A A A A W W °C Thermal Resistance Ratings Maximum Junction to Ambient 1 Notes: 1 2 Surface Mounted on 1” x 1” FR4 Board. Pulse width limited by maximum junction temperature. RJA °C / W http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 27-Jan-2011 Rev. A Page 1 of 4 SMG2314N Elektronische Bauelemente 4A , 20V, RDS(ON) 32 m N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 1 Symbol VGS(th) IGSS IDSS ID(on) RDS(ON) gfs VSD Qg Qgs Qgd Td(on) Tr Td(off) Tf Trr Min. 0.7 10 - Typ. 11.3 0.75 2 Max. ±100 1 10 32 44 - Unit V nA uA A mΩ S V Test Conditions VDS=VGS, ID= 250uA VDS= 0V, VGS= ±8V VDS= 16V, VGS= 0V VDS= 16V, VGS= 0V, TJ= 55°C VDS = 5V, VGS= 4.5V VGS= 4.5V, ID= 4.6A VGS= 2.5V, ID= 3.9A VDS= 10V, ID= 4.0A IS= 1.6A, VGS= 0V Drain-Source On-Resistance 1 Forward Transconductance Diode Forward Voltage Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Source-Ddrain Reverse Recovery Time Notes: 1 2 1 Dynamic 13.4 0.9 2.0 8 24 35 10 40 nC VDS= 10V, VGS= 4.5V, ID= 4.0A nS VDD= 10V, VGEN= 4.5V, RL= 15, ID= 1A IF=1.6A, di/dt =100 A/uS Pulse test：PW ≦ 300 us duty cycle ≦ 2%. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 27-Jan-2011 Rev. A Page 2 of 4 SMG2314N Elektronische Bauelemente 4A , 20V, RDS(ON) 32 m N-Channel Enhancement Mode MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 27-Jan-2011 Rev. A Page 3 of 4 SMG2314N Elektronische Bauelemente 4A , 20V, RDS(ON) 32 m N-Channel Enhancement Mode MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 27-Jan-2011 Rev. A Page 4 of 4