SMG2317P

SMG2317P Elektronische Bauelemente -0.9 A, -30 V, RDS(ON) 300 m P-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a High Cell Density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are lower voltage application, power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. A 3 SC-59 L 3 Top View 1 2 CB 1 2 K E D FEATURES     Low RDS(on) provides higher efficiency and extends battery life. Low Gate Charge Fast switch. Miniature SC-59 surface mount package saves board space. F G H J REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 REF. G H J K L Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 PACKAGE INFORMATION Package SC-59 MPQ 3K LeaderSize 7’ inch 1 3 2 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 Power Dissipation 1 Symbol VDS VGS ID @ TA=25°C ID @ TA=70°C Ratings -30 ±20 -0.9 -0.75 -10 0.4 0.5 0.42 -55 ~ 150 250 285 Unit V V A A A A W W °C °C / W ID IDM IS PD @ TA=25°C PD @ TA=70°C PD Operating Junction and Storage Temperature Range Maximum Junction to Ambient 1 Notes: 1 2 Tj, Tstg Thermal Resistance Data t ≦ 5 sec Steady State RJA Surface Mounted on 1” x 1” FR4 Board. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 05-Jan-2011 Rev. A Page 1 of 5 SMG2317P Elektronische Bauelemente -0.9 A, -30 V, RDS(ON) 300 m P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Switch Off Characteristics Drain-Source Breakdown Voltage Gate-Body Leakage V(BR)DSS IGSS -30 Zero Gate Voltage Drain Current IDSS -10 ±100 -1 μA VDS= -24V, VGS= 0V, TJ= 55°C V nA VDS= 0V, ID= -250uA VDS= 0V, VGS= ±20V VDS= -24V, VGS= 0V Switch On Characteristics Gate-Threshold Voltage On-State Drain Current 1 VGS(th) ID(on) -0.8 -2 Drain-Source On-Resistance 1 RDS(ON) Forward Transconductance 1 Diode Forward Voltage gfs VSD -1.7 250 530 450 2 -0.7 -2.6 300 660 500 -1.2 S V mΩ V A VDS=VGS, ID= -250uA VDS = -5V, VGS= -4.5V VGS= -10V, ID= -1A VGS= -4.5V, ID= -0.9A,TJ= 55°C VGS= -4.5V, ID= -0.9A VDS= -5V, ID= -1.1A IS= -0.4A, VGS= 0V Dynamic 2 Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs Qgd 2 0.5 1.1 3 nC VDS= -10V, VGS= -5V, ID= -0.9A Switching Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Notes: 1 2 Td(on) Tr Td(off) Tf - 8 16 36 33 16 32 nS 93 94 VDS= -10V, VGEN= -10V, RG= 50, ID= -0.9A Pulse test：PW ≦ 300 us duty cycle ≦ 2%. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 05-Jan-2011 Rev. A Page 2 of 5 SMG2317P Elektronische Bauelemente -0.9 A, -30 V, RDS(ON) 300 m P-Channel Enhancement Mode MOSFET CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 05-Jan-2011 Rev. A Page 3 of 5 SMG2317P Elektronische Bauelemente -0.9 A, -30 V, RDS(ON) 300 m P-Channel Enhancement Mode MOSFET CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 05-Jan-2011 Rev. A Page 4 of 5 SMG2317P Elektronische Bauelemente -0.9 A, -30 V, RDS(ON) 300 m P-Channel Enhancement Mode MOSFET CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 05-Jan-2011 Rev. A Page 5 of 5