SMG2319P

SMG2319P Elektronische Bauelemente -2.1A , -30V , RDS(ON) 200 m P-Channel Enhancement MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. 1 SC-59 A 3 3 L Top View 2 CB 1 2 FEATURES  K E D    Low RDS(on) provides higher efficiency and extends battery life. Fast Switch. Low Gate Charge. Miniature SC-59 Surface Mount Package Saves Board Space. F G Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 H Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 J REF. A B C D E F REF. G H J K L APPLICATION Voltage control small signal switch, power management in portable and battery-powered products such as computer portable electronics and other battery power application. 1 3 PACKAGE INFORMATION Package SC-59 MPQ 3K Leader Size 7’ inch 2 MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 Power Dissipation 1 TA=25°C TA=70°C TA=25°C TA=70°C Symbol VDS VGS ID IDM IS PD TJ, TSTG Ratings -30 ±20 -2.1 -1.7 ±10 -0.4 1.25 0.8 -55 ~ 150 250 285 Unit V V A A A W °C Operating Junction and Storage Temperature Range t≦5 sec Steady-State Thermal Resistance Data Maximum Junction to Ambient 1 RθJA °C/W Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 12-Apr-2011 Rev. B Page 1 of 5 SMG2319P Elektronische Bauelemente -2.1A , -30V , RDS(ON) 200 m P-Channel Enhancement MOSFET ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. 2 -0.7 2 Max. -1 -10 ±100 200 300 -1.2 Unit Test Conditions VDS = -24V, VGS=0 VDS = -24V, VGS=0, TJ=55°C VDS =0, VGS= ±20V VDS =VGS, ID = -250μA VDS = -5V, VGS= -4.5V VGS= -10V, ID = -2.1A VGS= -4.5V, ID = -1.7A VDS= -5V,,ID = -2.1A IS= -0.4A, VGS=0 Static Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Threshold Voltage On-State Drain Current 1 Drain-Source On-Resistance 1 Forward Transconductance 1 Diode Forward Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD -1.3 -3 μA nA V A mΩ S V Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qg Qgs Qgd Td(ON) Tr Td(OFF) Tf - 3.4 0.8 1.5 8 18 52 39 nS nC ID= -2.1A VDS= -10V VGS= -5V VDS= -10V VGEN= -10V RG=50Ω ID= -1.1A Notes: 1. Pulse test：PW ≦ 300 us duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 12-Apr-2011 Rev. B Page 2 of 5 SMG2319P Elektronische Bauelemente -2.1A , -30V , RDS(ON) 200 m P-Channel Enhancement MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 12-Apr-2011 Rev. B Page 3 of 5 SMG2319P Elektronische Bauelemente -2.1A , -30V , RDS(ON) 200 m P-Channel Enhancement MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 12-Apr-2011 Rev. B Page 4 of 5 SMG2319P Elektronische Bauelemente -2.1A , -30V , RDS(ON) 200 m P-Channel Enhancement MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 12-Apr-2011 Rev. B Page 5 of 5