SMG2325P

SMG2325P Elektronische Bauelemente -3.6 A, -20 V, RDS(ON) 55 m P-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printer , PCMCIA cards, cellular and cordless telephones. A 3 SC-59 L 3 Top View 1 2 CB 1 2 K E D FEATURES     Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SC-59 saves board Space. Fast switching speed. High performance trench technology. F G H J REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 REF. G H J K L Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 PACKAGE INFORMATION Package SC-59 MPQ 3K LeaderSize 7’ inch 1 3 2 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 Power Dissipation 1 Operating Junction and Storage Temperature Range Maximum Junction to Ambient 1 Notes 1 Surface Mounted on 1” x 1” FR4 Board. 2 Pulse width limited by maximum junction temperature. Symbol VDS VGS ID @ TA=25°C ID @ TA=70°C Ratings -20 ±12 -3.6 -2.9 -10 ±0.46 1.25 0.8 -55 ~ 150 100 166 Unit V V A A A A W W °C °C / W ID IDM IS PD @ TA=25°C PD @ TA=70°C PD Tj, Tstg Thermal Resistance Data t ≦ 5 sec Steady State RJA http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 05-Jan-2011 Rev. A Page 1 of 4 SMG2325P Elektronische Bauelemente -3.6 A, -20 V, RDS(ON) 55 m P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Gate-Threshold Voltage Gate-Body Leakage Symbol VGS(th) IGSS Min. -0.7 Zero Gate Voltage Drain Current IDSS On-State Drain Current 1 ID(on) -10 Drain-Source On-Resistance 1 RDS(ON) Forward Transconductance 1 Diode Forward Voltage gfs VSD 12 -0.6 -10 55 89 200 S V mΩ A Typ. Max. ±100 -1 μA VDS= -16V, VGS= 0V, TJ= 55°C VDS = -5V, VGS= -4.5V VGS= -4.5V, ID= -3.6A VGS= -2.5V, ID= -2.8A VGS= -1.8V, ID= -1.8A VDS= -5V, ID= -3.6A IS= -0.46A, VGS= 0V Unit V nA Test Conditions VDS=VGS, ID= -250uA VDS= 0V, VGS= ±8V VDS= -16V, VGS= 0V Dynamic 2 Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Qg Qgs Qgd Td(on) Tr Td(off) Tf 16.7 1.8 1.9 9 4 25 20 nS VDD= -10V, VGEN= -4.5V, RG= 6, IL= -1A nC VDS= -5V, VGS= -4.5V, ID= -3.6A Notes 1 Pulse test：PW ≦ 300 us duty cycle ≦ 2%. 2 Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 05-Jan-2011 Rev. A Page 2 of 4 SMG2325P Elektronische Bauelemente -3.6 A, -20 V, RDS(ON) 55 m P-Channel Enhancement Mode MOSFET CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 05-Jan-2011 Rev. A Page 3 of 4 SMG2325P Elektronische Bauelemente -3.6 A, -20 V, RDS(ON) 55 m P-Channel Enhancement Mode MOSFET CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 05-Jan-2011 Rev. A Page 4 of 4