SMG2328NE

SMG2328NE Elektronische Bauelemente 6.3 A, 20 V, RDS(ON) 22 m N-Channel Enhancement MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers,PCMCIA cards, cellular and cordless telephones. K A 3 3 L Top View 1 2 CB 1 2 E D FEATURES     Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SC-59 saves board space. Fast switching speed. High performance trench technology. F G H J REF. A B C D E F PACKAGE INFORMATION Package SC-59 MPQ 3K LeaderSize 7’ inch Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 REF. G H J K L Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 ESD Protection Diode 2KV ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 TA=25°C TA=70°C VDS VGS ID IDM IS PD TJ, TSTG 20 ±8 6.3 5.2 20 1.6 1.3 0.9 -55 ~ 150 100 166 Unit V V A A A W °C Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 TA=25°C Power Dissipation 1 TA=70°C Operating Junction and Storage Temperature Range t≦5 sec Steady-State Thermal Resistance Data Maximum Junction to Ambient 1 RθJA °C/W Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 05-Jan-2011 Rev. A Page 1 of 2 SMG2328NE Elektronische Bauelemente 6.3 A, 20 V, RDS(ON) 22 m N-Channel Enhancement MOSFET ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 1 Drain-Source On-Resistance 1 Forward Transconductance 1 Diode Forward Voltage Symbol Min Static VGS(th) IGSS IDSS ID(ON) RDS(ON) gFS VSD 0.4 10 - Typ Max Unit 11.3 0.75 ±100 1 10 22 26 V nA μA A mΩ S V Test Conditions VDS = VGS, ID = 250μA VDS = 0V, VGS= ±8V VDS = 16V, VGS= 0V VDS = 16V, VGS= 0V, TJ=55°C VDS = 5V, VGS= 4.5V VGS= 4.5V, ID = 6.5A VGS= 2.5V, ID = 5.8A VDS= 10V,,ID = 6.5A IS= 1.6A, VGS= 0V Dynamic 2 Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qg Qgs Qgd Td(ON) Tr Td(OFF) Tf 13.4 0.9 2.0 8 24 35 10 nS ID= 1A, VDD= 10V VGEN= 4.5V RL= 15Ω nC ID= 6.5A VDS= 10V VGS= 4.5V Notes: 1. Pulse test：PW ≦ 300 us duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 05-Jan-2011 Rev. A Page 2 of 2