SMG2330N

SMG2330N Elektronische Bauelemente 5.2A, 30V, RDS(ON) 32mΩ N-Channel Enhancement MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWMDC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. A L 3 SC-59 3 Top View 1 2 CB 1 2 K E D FEATURES Low RDS(on) Provides Higher Efficiency and Extends Battery Life Miniature SOT-23 Surface Mount Package Saves Board Space High power and current handling capability Low side high current DC-DC Converter applications F G Millimeter Min. Max. 2.70 3.10 2.25 3 .0 0 1.30 1 .7 0 1.00 1.40 1.70 2.30 0.35 0.50 H Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 J REF. A B C D E F REF. G H J K L PACKAGE INFORMATION Package SC-59 MPQ 3K Leader Size 7 inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Continuous Gate-Source Voltage Continuous Drain Current Pulsed Drain Currentb 2 1 1 Symbol VDSS VGSS TA=25° C ID TA=70° C IDM IS PD TA=70° C Rating 30 ±20 5.2 Unit V V A 4.1 30 1.6 1.3 W 0.8 TJ, Tstg -55~150 ° C A A Continuous Source Current (Diode Conduction) Power Dissipationa 1 TA=25° C Junction and Storage Temperature Range Thermal Resistance Rating Maximum Junction to Ambient 1 t≦5 sec RθJA Steady-State 100 166 ° /W C ° /W C Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 4-Jul-2011 Rev. A Page 1 of 2 SMG2330N Elektronische Bauelemente 5.2A, 30V, RDS(ON) 32mΩ N-Channel Enhancement MOSFET ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter 1 Symbol Min. Static Typ. Max. Unit Teat Conditions On-State Drain Current ID(on) IDSS IGSS VGS(th) 1 20 - 40 0.7 2 1 A µA VDS=5V, VGS=10V VDS=24V , VGS=0 VDS= 24V, VGS=0, TJ=55° C Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Drain-Source On Resistance Forward Transconductance Diode Forward Voltage 1 1 - 25 ±100 32 m 64 S V nA V VGS=20V, VDS=0 VDS=VGS, ID=250µA VGS=10V, ID=5.2A VGS=4.5V, ID=3.7A VDS=15V,,ID=5.2A IS=2.3 A, VGS=0 RDS(ON) gFS VSD - Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-Off Delay Time Rise Time Fall-Time Qg Qgs Qgd Td(ON) Td(OFF) Tr Tf - 4.0 1.1 1.4 16 23 5 3 nS nC VDS=15V, VGS=4.5V, ID=5.2A VDD=25V, RL=25 , ID=1A, VGEN=10V Notes: 1. Pulse test: PW