SMG2334NE

SMG2334NE Elektronische Bauelemente 3.5 A, 30 V, RDS(ON) 60 m N-Channel Enhancement MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. SC-59 A 3 L 3 Top View CB 1 2 2 FEATURES     Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SC-59 saves board space. Fast switching speed. High performance trench technology. 1 K E D F G H J REF. PRODUCT SUMMARY PRODUCT SUMMARY VDS(V) 30 RDS(on) ( 60@VGS= 4.5V 82@VGS= 2.5V ID(A) 3.5 3.0  Gate  Drain A B C D E F Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 REF. G H J K L Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 ESD Protection Diode 2KV  Source ABSOLUTE MAXIMUM RATINGS AND THERMAL DATA(TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATING UNIT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B Continuous Source Current (Diode Conduction) A Power Dissipation A TA=25°C TA=70°C VDS VGS ID IDM IS 30 ±12 3.5 2.8 16 1.25 1.3 0.8 -55 ~ 150 100 166 V V A A A W °C °C/W TA=25°C PD TA=70°C Operating Junction and Storage Temperature Range TJ, TSTG THERMAL RESISTANCE DATA t≦10 sec A Maximum Junction to Ambient RθJA Steady-State Notes a. b. Surface Mounted on 1” x 1” FR4 Board. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 14-Jul-2010 Rev. A Page 1 of 4 SMG2334NE Elektronische Bauelemente 3.5 A, 30 V, RDS(ON) 60 m N-Channel Enhancement MOSFET ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) PARAMETER SYMBOL MIN TYP MAX UNIT Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current A Drain-Source On-Resistance A Forward Transconductance A Diode Forward Voltage VGS(th) IGSS IDSS ID(ON) RDS(ON) gFS VSD 0.6 6 6.9 0.8 ±100 1 25 60 82 V nA μA A mΩ S V VDS = VGS, ID = 250μA VDS = 0V, VGS= 4V VDS = 24V, VGS= 0V VDS = 24V, VGS= 0V, TJ=55°C VDS = 5V, VGS= 4.5V VGS= 4.5V, ID = 3.5A VGS= 2.5V, ID = 3A VDS= 15V,,ID = 3.5A IS= 2.3A, VGS= 0V TEST CONDITIONS Dynamic b Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Notes a. b. Pulse test：PW ≦ 300 us duty cycle ≦ 2%. Guaranteed by design, not subject to production testing. Qg Qgs Qgd Td(ON) Tr Td(OFF) Tf - 6.3 0.9 1.9 16 5 23 3 nC ID= 3.5A VDS= 15V VGS= 2.5V ID= 1A, VDD= 25V nS VGEN= 10V RL= 25Ω http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 14-Jul-2010 Rev. A Page 2 of 4 SMG2334NE Elektronische Bauelemente 3.5 A, 30 V, RDS(ON) 60 m N-Channel Enhancement MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 14-Jul-2010 Rev. A Page 3 of 4 SMG2334NE Elektronische Bauelemente 3.5 A, 30 V, RDS(ON) 60 m N-Channel Enhancement MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 14-Jul-2010 Rev. A Page 4 of 4